Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 18, Issue 10
Displaying 1-3 of 3 articles from this issue
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  • Space Chamber in Tsukuba Space Center
    Senjiro IIDE
    1975 Volume 18 Issue 10 Pages 338-343
    Published: October 20, 1975
    Released on J-STAGE: October 14, 2009
    DOIhttps://doi.org/10.3131/jvsj.18.338
    JOURNAL FREE ACCESS
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  • Growth Process of Ag Film Deposited by Ion Deposition
    Yoshikatsu NAMBA, Toshio MORI, Keiji NAGAI
    1975 Volume 18 Issue 10 Pages 344-349
    Published: October 20, 1975
    Released on J-STAGE: October 14, 2009
    DOIhttps://doi.org/10.3131/jvsj.18.344
    JOURNAL FREE ACCESS
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    Growth process of Ag films deposited by ion deposition has been studied with the aid of electron-microscopy and X-ray diffraction methods. Deposition is made on NaCl and glass substrates at a pressure of 3 ×10-6 Torr, keeping the ratio of numbers of Ag ions in Ag atoms at 20%. From the observation of diffraction pattern, films ion deposited on glass or NaCl substrates which were ion bombarded prior to the deposition show the ring pattern as seen in ordinary vacuum evaporation, however, for cleaved NaCl substrates the clear spotty pattern is obtained even when the deposition was made at room temperature. It has also been shown that for the change of substrate potential from 0 to 1, 500 V the spotty pattern is almost unchanged.
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  • Trial Production of the Deposition Device with Heating System of Ion Bombardment
    Osamu TSUKIDE, Mutsuo YAMASHITA
    1975 Volume 18 Issue 10 Pages 350-356
    Published: October 20, 1975
    Released on J-STAGE: October 14, 2009
    DOIhttps://doi.org/10.3131/jvsj.18.350
    JOURNAL FREE ACCESS
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    The argon plasma, which contained highly concentrated argon ions, was produced by argon gas discharge of electrode-less of radio frequency. point end of rod type Ti target in argon plasma was bombarded with the argon ions by application of strong electrical field. Therefore, the temperature of the top of target was gradually raised.In the final state, the top of the Ti target was found to be melted and evaporated.
    An evaporation device was produced experimentally with the above-mentioned heating method. This device was tentatively used in order to make Ti thin films, which experiment turned out a success.
    The evaporated Ti particles were found to be ionized in passing through radio frequency electro-magnetic field. Then, the ionized Ti particles were easily centralized into ion beam state by making use of DC magnetic field.
    This device makes it possible to control the followings easily in wide range; an ionization rate of argon, an evaporation rate of Ti, and a degree of centralization of evaporated Ti particles respectively, because the mechanisms of the above-mentioned each systems in this device are those independent of one another.
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