Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 14, Issue 9
Displaying 1-4 of 4 articles from this issue
  • Ichio ARIKATA, Tokuo SUITA
    1971 Volume 14 Issue 9 Pages 314-319
    Published: September 20, 1971
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
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  • Michio NAGASAKA, Toshiro YAMASHINA
    1971 Volume 14 Issue 9 Pages 320-324
    Published: September 20, 1971
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    The reaction kinetics of titanium foil with oxygen at the very low pressures of 8 ×10-6 to 6×10-5 Torr has been studied in the temperature range of 4750 to 890°C, by means of an ultra-high vacuum microbalance. The rate of reaction was separable in two types, i. e., the linear rate law in the initial and the parabolic rate law in the latter period. The linear rate law was obeyed for longer times as the reaction temperature increased, . the rate being almost unchanged within the temperature range of 475° to 890°C. In the initial linear part, the reaction rate was proportional to the oxygen pressure at each temperature which showed the linear oxidation to be controlled by the rate of arrival. The sticking probability and pumping speed per unit area (cm2) for oxygen were constant with the change of oxygen pressure, e. g., 0.023 for the sticking probability and 0.45 liters/sec for pumping speed at 700°C.
    On the bases of kinetic data including isothermal reaction rates with rapid change of oxygen pressure and vacuum annealing, discussion was made on the process of transformation in the reaction rate law.
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  • Akito SATUKA, Fumichika MORI, Masayosi NARITA, Kintaro MORI, Michio MI ...
    1971 Volume 14 Issue 9 Pages 325-333
    Published: September 20, 1971
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    This paper deals with an evaporation synthesis of zirconium nitride thin films which are used as electrical resistors. First, the thickness distributions of films produced by multiple sources have been computed. The incidence distribution of gas molecules on a substrate also has been calculated in a system with four gas inlet nozzles. The continuous evaporation apparatus for industrial use having a three-gun system for evaporation of zirconium was developed. The power of each electron gun is capable to be controlled individually by evaporation rate monitors in order to keep the evaporation rate constant. The uniformity in thickness of the deposited films has been compared with the theoretically calculated values. The specific resistivity of films and the temperature coefficient of film resistivity have been checked in relation to the synthesis condition of zirconium nitride thin films.
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  • [in Japanese]
    1971 Volume 14 Issue 9 Pages 326-327
    Published: September 20, 1971
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Download PDF (237K)
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