All issues
Volume 42, Issue 7
Displaying 1-6 of 6 articles from this issue
- |<
- <
- 1
- >
- >|
-
Hiroyuki FUJIOKA, Souichi MASHINO, Satoshi AIKYO, Miki GOTO, Toshihiko ...1999 Volume 42 Issue 7 Pages 647-651
Published: July 20, 1999
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSNeutral CF3 and CF2 radicals in a hollow cathode DC CF4 discharge were first detected with a quadrupole mass spectrometer, using the threshold ionization technique. At CF4 pressure of 27 Pa, the densities of both radicals were measured as a function of discharge current over a range of 20-50 mA. CF4 pressure dependences of these radical densities were also measured over a CF4 pressure range of 27-80 Pa. The results showed that the CF3 and CF2 radical densities increased with discharge current. The CF3 radical density increased with CF4 pressure. On the other hand, the CF2 radical density increased up to 40 Pa and then tended to be decrease.View full abstractDownload PDF (586K) -
Yoshihiro SAWAHIRA, Akishige SATO, Naoto KIKUCHI, Eiji KUSANO, Hidehit ...1999 Volume 42 Issue 7 Pages 652-656
Published: July 20, 1999
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSAn energetic approach in nano-indentation process using a Berkovich type indenter was applied to the evaluation of mechanical properties of thin films. Double layered Al/TiN films were deposited onto glass substrates by dc-magnetron sputtering apparatus. Thickness of the TiN upper layer was 500 nm, while that of Al bottom layer varied from 0 to 500 nm. The deformation energy caused by the indentation was obtained from the area of load-displacement curves indicated during the nano-indentation process. The deformation energy of the thin films was divided into elastic and plastic components. The elastic energy of the films showed constant values at each indentation load. Dissipated energy, however, increased with increasing Al thickness. This result suggests that the elastic deformation mainly takes place in the TiN layer and the plastic deformation does in the Al layer.View full abstractDownload PDF (717K) -
Naoto KIKUCHI, Masaru KITAGAWA, Akishige SATOH, Yoshihiro SAWAHIRA, Ei ...1999 Volume 42 Issue 7 Pages 657-662
Published: July 20, 1999
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSCrystal structure, dynamic hardness and internal stress of compositionally modulated Ti-TiN multilayer films were examined in order to discuss the mechanism of hardness enhancement by compositional modulation. The hardness of the films showed a sharp peak at10 nm and was larger than that of a monolithic TiN film. XRD patterns of the films with short modulation periods showed peaks assigned to TiN single phase. With increasing the modulation period to 20 nm, XRD peaks assigned to TiN phase were broadened and weakened. Further increasing the period, broad peaks assigned to Ti were emerged. Compressive stress, which causes the films hardened, was observed in monolithic Ti and TiN, and compositionally modulated Ti-TiN films. Energy dissipated ratio defined as the ratio of dissipated energy to applied energy showed the minimum at the modulation period of 10 nm, indicating that plastic component of the deformation energy decreased. Reduction of the plastic component at the modulation period of 10 nm was in good agreement with results obtained by the hardness measurement. Decreasing of the plastic component strongly suggests that TiN layers, which has a high elastic modulus, plays an important part in the plastic deformation of the films at short modulation period.View full abstractDownload PDF (824K) -
Isao AKUTSU, Gen'ichi HORIKOSHI1999 Volume 42 Issue 7 Pages 663-669
Published: July 20, 1999
Released on J-STAGE: January 30, 2010
JOURNAL FREE ACCESSIn a volume displacement type vacuum pump, the pumping speed S is expressed in terms of a displacement volume V and the repetition rate f as
S=Vf
In a screw vacuum pump, a kind of volume displacement type vacuum pump, the displacement volume is tublar in shape and acts as a resistance in the pumping action. In the report, we analysed the effect of flow conductance of the displacement volume on the pumping speed. The result of the analysis shows that the resistance effect on the pumping speed is negligible in high pressure region, but not negligible in a low pressure of free molecular pressure region. In some typical examples, we have obtained correction factor K of less than 50% under an operating condition of free molecular pressure region. It was certifyed that the gradational screw pump, which is a novel type of screw pump, has a better value of K than that of the old one by about 10% or more.View full abstractDownload PDF (870K) -
Takayoshi SEKI, Katsumi TOKIGUCHI1999 Volume 42 Issue 7 Pages 670-675
Published: July 20, 1999
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSSeparation by Implanted Oxygen (SIMOX) wafer is recognized as one of the promising Silicon on Insulator (SOI) substrates to be used for next generation semiconductor device fabrication. Since high dose O+ implantation of about 4 × 1017 ions/cm2 is conventionally carried out in SIMOX wafer fabrication process, the use of very highcurrent ion beams is indispensable for volume production. This report describes characteristics of a new high-current microwave ion source which contains a specially-designed transform waveguide and a cylindrical plasma chamber. Oxygen ion beams of 240 mA could be extracted with multi-aperture electrode system. The data indicates that this source has a good potential to increase SOI substrate throughput.View full abstractDownload PDF (873K) -
Hollow Cathode Discharge Coating Conditions and Properties of TiN Films with Straight-type W CathodeYukio INOKUTI, Kazuhiro SUZUKI, Yasuhiro KOBAYASHI, Osamu OHKUBO1999 Volume 42 Issue 7 Pages 676-679
Published: July 20, 1999
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSIn order to clarify the influence of the W cathode in the hollow cathode discharge (HCD) method, straight-type W, W+Ta, and Ta cathodes were investigated using a horizontal-type high-current HCD apparatus, and HCD coating conditions and properties of TiN film with these cathodes were evaluated.
(1) The life time of the W+Ta cathode during HCD plasma coating was 3-4 times as long as that of the Ta cathode.
(2) Thin-film X-ray diffraction of TiN films using W and W+Ta cathodes manifested a stronger (111) peak of TiN than that of the Ta cathode.
(3) Although no clear difference in the scanning electron microscopic observation of the TiN was observed, color monitoring of the TiN films with the W+Ta cathode showed a dark gold.View full abstractDownload PDF (765K)
- |<
- <
- 1
- >
- >|