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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 27, Issue 3
Displaying 1-4 of 4 articles from this issue
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  • Frontiers of Vacuum Technology
    Hiroshi TSUJIKAWA
    1984 Volume 27 Issue 3 Pages 97-142
    Published: March 20, 1984
    Released on J-STAGE: January 28, 2010
    DOIhttps://doi.org/10.3131/jvsj.27.97
    JOURNAL FREE ACCESS
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  • Electrochromic Characteristics of Reactively Sputtered Iridium Oxide Films
    Tsutomu KANAI, Masashi HARA, Hiroki NIIYAMA, Teruaki KATSUBE, Toshiaki ...
    1984 Volume 27 Issue 3 Pages 143-149
    Published: March 20, 1984
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.27.143
    JOURNAL FREE ACCESS
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    Preparation and electrochromic properties of sputtered iridium oxide films (SIROF's) were investigated to find the optimum deposition conditions. It was found that electrochromic properties and stabilities of SIROF's strongly depend on oxygen pressure and deposition rate. The optical efficiency as high as 20 cm2/C was attained with the deposition rate of 5-10Å/min and the oxygen pressure of 35 mTorr The obtained films showed stable color changes in 0.5M H2SO4 electrolyte. In order to get the contrast change of 3 (Δ OD =0.47), the required charge density was 25 mC/cm2 at the oxide thickness of 700Å with the response time less than 100 msec in both coloring and bleaching processes.
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  • Vacuum Deposited BaTiO3 Films
    Yoshio IIJIMA
    1984 Volume 27 Issue 3 Pages 150-156
    Published: March 20, 1984
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.27.150
    JOURNAL FREE ACCESS
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    It is reported here the relationship between the structural and electrical properties of the vacuum deposited BaTiO3 films and the degree of vacuum. The X-ray diffraction patterns indicated that the structure of the film deposited at 1 × 10-3 to 1 × 10-4 Torr and at 1 × 10-5 to 1 × 10-6 Torr were hexagonal and tetragonal phase, respectively. The samples were annealed and the dielectric constants were measured. These values were 100 to 300 and 1200 to 1300 for the hexagonal and tetragonal phase films, respectively.
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  • Properties of Amorphous Si1-xGex : H Alloys Prepared by Planar Magnetron Sputtering
    Nobuo SAITO, Koji AOKI, Hitoshi SANNOMIYA, Tomuo YAMAGUCHI
    1984 Volume 27 Issue 3 Pages 157-165
    Published: March 20, 1984
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.27.157
    JOURNAL FREE ACCESS
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    Amorphous Si1-xGex : H alloys have been prepared by r.f. planar magnetron sputtering method using composite target of Si and Ge in an atmosphere of hydrogen diluted by argon. Optical absorption coefficient, d.c. conductivity and it spectra were measured, and the dependence of these properties on Ge content x was investigated.
    For the films of x being about 0.1, it is found that the ratio of photo-conductivity to dark conductivity (photo sensitivity) increases and dark conductivity decreases about one order of magnitude compared with a-Si : H. This phenomenon seems to be caused by a relaxation of the disorder of tetrahedrally bonded structure.
    Photo-sensitivity decreases in the range of x above 0.3. This is considered to be due to the alloying effect between Si and Ge. For the films of x above 0.6, it is considered that density of localized states increases due to the decrease of bonded hydrogen, caused by the difference of sputtering rate and bonding energy with hydrogen between Si and Ge.
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