Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 16, Issue 2
Displaying 1-3 of 3 articles from this issue
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  • The Vacuum System of the KEK Proton Synchrotron
    Gen'ichi HORIKOSHI
    1973 Volume 16 Issue 2 Pages 51-61
    Published: February 20, 1973
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.16.51
    JOURNAL FREE ACCESS
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  • Cross-Sectional Structure of Bi Films and Its Phenomenalistic Analysis
    Yoshikatsu NAMBA, Toshio MORI, Michio TACHIKAWA
    1973 Volume 16 Issue 2 Pages 62-68
    Published: February 20, 1973
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.16.62
    JOURNAL FREE ACCESS
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    The cross-sectional structure of evaporated Bi films has been investigated electron-microscopically by means of the replica technique. Films were prepared with changing the evaporation conditions : substrate temperature, residual gas pressure and deposition rate. The influence of deposition rate appears most conspicuously at the thickness where the film becomes continuous. The structure of the film surface is essentially determined at this stage. Based on these results, the phenomenalistic treatment was also made by assuming that the deformation of surface takes place due to the surface diffusion of evaporated atoms. It has been shown that the theoretical result as a function of temperature and deposition rate agrees well with the experimental one.
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  • The Influence of Electron Beam Evaporation on MIS device
    Haruhiko ABE, Yasuo INOUE, Hiroshi MORITA, Tatsuya ENOMOTO
    1973 Volume 16 Issue 2 Pages 69-76
    Published: February 20, 1973
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.16.69
    JOURNAL FREE ACCESS
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    The effects of the irradiation of X-ray, which is emitted from electron bombardment heated source during the evaporation of Al thin film, on MOS and MNOS diodes are investigated. The effects of Xray irradiation, which are observed from the measurements of C-V and G-V characteristics of the diodes before and after X-ray and electron bombardment, result in the generation of the oxide charges and the interface states. These effects are annealed out at 400°C. MNOS structures are found to be less influenced by X-ray irradiation and electron bombardment, comparing with MOS structure. In the case of little radiation dose the only generation of the radiation-induced oxide charge is observed in MNOS diode. In the case of larger radiation dose, both the oxide charges and the surface states induced by radiation are also observed. The amount of the space charge induced in the oxide saturates at a certain radiation dose.
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