Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 14, Issue 5
Displaying 1-3 of 3 articles from this issue
  • Yoshihiro SENSUI
    1971 Volume 14 Issue 5 Pages 155-245
    Published: May 20, 1971
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
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  • Shinji NISHIO
    1971 Volume 14 Issue 5 Pages 166-177
    Published: May 20, 1971
    Released on J-STAGE: January 28, 2010
    JOURNAL FREE ACCESS
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  • Hideo TODOKORO, Tsutomu KONODA, Mikio ASHIKAWA
    1971 Volume 14 Issue 5 Pages 178-183
    Published: May 20, 1971
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    A Silicon diode array target has been studied for an electron microscope television system. The target is located inside of an electron microscope column and directly bombarded with imaging electrons. A current gain (ratio of bombarding current and signal current produced by electro bombardment in the target) of over 7, 000 is obtained when the target is bombarded with a high potential electron beam. Some characteristics of the target measured in the present experiment are as follows.
    (1) Current gain reaches to the maximum value at optimum beam potential and falls down in the higher potential region as well as in the lower region.
    (2) As the target thickness increases, the optimum value of beam potential shifts to the higher potential region. The maximum value of current gain also increases with thickness while the resolution decreases.
    (3) The resolution can be restored by elevation of the beam potential.
    After all, it becomes evident that the television system with the silicon-target provides a large brightness intensification in electron microscopic image obsevation and it is applicable for the wide range of beam potential (1001000kV) if the target is selected at the optimum thickness which depends on the applying beam potential.
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