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Volume 45, Issue 1
Displaying 1-5 of 5 articles from this issue
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Mitsuaki NISHIJIMA2002 Volume 45 Issue 1 Pages 2-9
Published: January 20, 2002
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (1263K) -
Yoshihito MAEDA2002 Volume 45 Issue 1 Pages 10-17
Published: January 20, 2002
Released on J-STAGE: October 20, 2009
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Hironaga MATSUMOTO, Kimio ANDO, Noboru MIURA, Ryotaro NAKANO2002 Volume 45 Issue 1 Pages 18-25
Published: January 20, 2002
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSHafnium-titanium-oxide thin films with arbitrary composition are prepared by multi-target rf reactive sputtering using metallic targets of hafnium and titanium. The compositional ratio x = Ti/ (Hf + Ti) in the thin film is controlled exactly through rf power. The crystal structure of the hafnium-titanium-oxide thin film was identified as monoclinic at x<0.45 and amorphous at x≥0.45. Hafnium and titanium in the thin film are found to exist as mixtures of chemically bonded HfO2 and TiO2 from XPS spectra. The refractive index of the hafnium-titanium oxide thin film at 550 nm changes from 2.1 to 2.5 according to titanium composition, and the dispersion of the refractive index is found to follow a Lorentz oscillator model with 4 oscillators. The variation of the refractive index of the film is primarily due to the increase in the intensity of the oscillator strength S3 and S4, corresponding to the oscillator energies E3 (5.0 eV) and E4 (4.4 eV) of titanium oxide.View full abstractDownload PDF (1242K) -
Takamitsu NAKANOYA, Masato SASASE, Hiroyuki YAMAMOTO, Takeru SAITO, Ki ...2002 Volume 45 Issue 1 Pages 26-31
Published: January 20, 2002
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSWe have prepared the “environmentally friendly” semiconductor, β-FeSi2 thin films by ion beam sputter deposition method. The temperature of Si (100) substrate during the deposition and total amount of deposited Fe have been changed in order to find the optimum condition of the film formation. The crystallinity and surface morphology of the formed silicides were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. It is understood that the domain of the epitaxially grown β-FeSi2 increases with the substrate temperature up to 700°C at the fixed amount of deposited Fe (33 nm) by XRD spectra. On the other hand, α-FeSi2 is appeared and increased with the temperature above 700°C. Granulation of the surface is also observed by SEM images at this temperature region. At the fixed temperature condition (700°C), formation of α phase, which is obtained at the higher temperature compared with β phase, is observed for the fewer deposited samples. These results suggest the possibility of the epitaxially grown β-FeSi2 formation at the lower (<700°C) temperature region.View full abstractDownload PDF (1378K) -
Yoichiro YAMANAKA, Katuto TANAHASHI, Takeshi MIKAYAMA, Naohisa INOUE, ...2002 Volume 45 Issue 1 Pages 32-35
Published: January 20, 2002
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThere are void defects in as-grown Czochralski Silicon. Void defects provoke breakdown of thermal oxide in the MOS structure. Therefore it is necessary to study their nucleation mechanism. We had proposed the heterogeneous nucleation model. Recently, homogeneous nucleation model has been proposed by Voronkov. In this paper we examine the problems of homogeneous model quantitatively. We propose that oxide precipitate is the heterogeneous nucleation site.
Carbon is likely to be a candidate for the heterogeneous nucleation site of the oxide precipitate.View full abstractDownload PDF (548K)
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