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Volume 46, Issue 10
Displaying 1-6 of 6 articles from this issue
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Akira KINBARA, Eiji KUSANO, Masahiko SAKAMOTO2003 Volume 46 Issue 10 Pages 719-725
Published: October 20, 2003
Released on J-STAGE: October 20, 2009
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Satoshi IWATSUBO2003 Volume 46 Issue 10 Pages 726-733
Published: October 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSTechnologies of fabricating resent semiconductor devices such as electro-luminescence (EL) devices, LED, laser sources and solar cells require conductive films with high transparency to ultraviolet light. Ultrathin Au film is a good candidate for this application, wherein the transparency goes up with a decrease of film thickness. However, it has been known that ultrathin Au films deposited by several methods such as evaporation and conventional sputtering are not conductive due to the formation of island structure at the initial growth stage. In this study, the initial island growth was controlled by Ar bombardment using an ion source, and ultrathin conductive Au films were deposited by dual ion beam sputtering [DIBS]. The optimum condition for the sputtering and Ar bombardment was studied. Again, the two kinds of Au films, without Ar bombardment [IBS], and with Ar bombardment [DIBS], were deposited as a function of thickness (tF). The tF dependence of the morphology and the resistivity (ρ) and the transmittance (T) was investigated. The films deposited by IBS and DIBS transformed from island structure to layer structure at tF of 8.0 and 2.8 nm, respectively. The films showed conductive properties above these critical tF. T of the films was higher than 62% for IBS and 75% for DIBS at a wavelength between 200 and 400 nm. It was found that the technique of Ar bombardment was useful to suppress the initial growth of island structure.View full abstractDownload PDF (2059K) -
Masaaki FUTAMOTO2003 Volume 46 Issue 10 Pages 738-744
Published: October 20, 2003
Released on J-STAGE: October 20, 2009
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Influence of Hydrogens and Substrate Thermal Conductivity on the Critical Energy DensityNaoto MATSUO, Naoya KAWAMOTO, Fakhrul Anwar Bin Abd AZIZ, Isao HASEGAW ...2003 Volume 46 Issue 10 Pages 745-751
Published: October 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSRelationship between the critical energy density of the excimer laser at which the secondary grain growth occurs and the substrate thermal conductivity and the hydrogens in the SiN films are clarified considering the grain morphologies, the grain size of the LTPS (low temperature polycrystalline silicon) on the quartz, SiO2/glass and SiO2/SiN/glass substrates. Dependence of the stress and the crystal defects in the poly-Si on the substrate structure is discussed from the Raman TO phonon peak shift and the full width at half maximum (FWHM) of the peak. The origin of this phenomenon is examined by the crystal growth model considering the defects movement at the low energy.View full abstractDownload PDF (1598K) -
Hideaki AGURA, Akio SUZUKI, Takanori AOKI, Tatsuhiko MATSUSHITA, Hirok ...2003 Volume 46 Issue 10 Pages 752-755
Published: October 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSZnO doped with 2 wt% and 1 wt% Al2O3 (AZO) films were deposited on glass substrates by pulsed laser deposition method. In all experiments, repetition rates of 10 Hz, the energy density of 0.752 J/cm2, and an ablation time of 1550 min irrespective of magnetic field. A lowest resistivity of 9.27×10-5 Ω·cm and an optical transmittance of more than 91% in the visible range of the spectrum were obtained on the film fabricated with the magnetic field. This improvement of the properties with using magnetic field is due to the enhancement of crystallization and crystal grain growth and the improvement of ZnO (0002) orientation.View full abstractDownload PDF (1048K) -
Yuko HIROHATA, Dai MOTOJIMA, Yuji YAMAUCHI, Tomoaki HINO, Takeo MUROGA2003 Volume 46 Issue 10 Pages 756-759
Published: October 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThe deuterium retention property of vanadium alloy, V-4Cr-4Ti which is a candidate material for blanket in a fusion reactor was investigated by deuterium ion irradiation and gas desorption measurement after irradiation using thermal desorption spectroscopy (TDS). The deuterium ion irradiation to the vanadium alloy sample was carried out at the temperatures of 380 and 773 K and at ion energy of 1.7 keV. Deuterium retained in the sample desorbed in the forms of D2, HD, HDO and D2O during heating up to 1273 K in a TDS apparatus. The retained amount of deuterium in the sample after deuterium ion irradiation at 380 K linearly increased with the fluence of deuterium ion, and did not saturate to the fluence up to 7×1018 D /cm2, and was 100% of implanted D which was one order or two orders of magnitude larger than those of graphite and tungsten, respectively. At the irradiation temperature of 773 K and the fluence up to 8 × 1018 D/cm2, the retention of deuterium in the sample has small dependence against the ion fluence and was approximately 8% of implanted D.View full abstractDownload PDF (550K)
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