Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 19, Issue 10
Displaying 1-3 of 3 articles from this issue
  • Masao KOYANAGI, Tadashi ENDO, Akira NAKAMURA
    1976 Volume 19 Issue 10 Pages 329-336
    Published: October 20, 1976
    Released on J-STAGE: September 04, 2009
    JOURNAL FREE ACCESS
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  • Yuichi MATSUSHIMA, Shun-ichi GONDA
    1976 Volume 19 Issue 10 Pages 337-347
    Published: October 20, 1976
    Released on J-STAGE: January 22, 2010
    JOURNAL FREE ACCESS
    Epitaxial films of GaP and GaAs-1xPx were grown on (100) -oriented GaP substrates by molecular beam epitaxy. According to evaluation of crystallographic quality by RHEED and SEM, at the deposition rate of 1530 Å/min the deposited GaP and GaAs1-xPx were single crystalline at the substrate temperature, T, of 550 _??_ Ts_??_600°C and 540 _??_ Ts _??_ 600°C, respectively. IMA and photoluminescence studies show the epitaxial films include few impurities and few defects. Composition ratio, x, of GaAs1-xPx is dependent both substrate temperature, Ts, and the intensity ratio of P to As molecules, and the rate of decrease of x with Ts, - dx/d Ts, is 0.003°C-1 for all the intensity ratio concerned (np/nAs = 211). The sticking coefficient of P is found to vary inversely proportional to substrate temperature.
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  • Isamu TOYOSHIMA, Kimitatsu RYO, Masanori HASHIMOTO
    1976 Volume 19 Issue 10 Pages 348-353
    Published: October 20, 1976
    Released on J-STAGE: September 04, 2009
    JOURNAL FREE ACCESS
    In order to study the adsorbed states of gases on clean surfaces, two types of the temperature controllers which are able to use for the controlled heating of filament and plate sample, were constructed.
    The controllers were used for adsorption studies of W filament- CO and Re filament- CO and -H2 system, and also used for studies of N2 adsorption on iron single crystal surface (111).
    The facilities of the temperature controllers were discussed on the basis of the results obtained.
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