Epitaxial films of GaP and GaAs
-1xP
x were grown on (100) -oriented GaP substrates by molecular beam epitaxy. According to evaluation of crystallographic quality by RHEED and SEM, at the deposition rate of 1530 Å/min the deposited GaP and GaAs
1-xP
x were single crystalline at the substrate temperature,
T, of 550 _??_
Ts_??_600°C and 540 _??_
Ts _??_ 600°C, respectively. IMA and photoluminescence studies show the epitaxial films include few impurities and few defects. Composition ratio,
x, of GaAs
1-xP
x is dependent both substrate temperature,
Ts, and the intensity ratio of P to As molecules, and the rate of decrease of
x with
Ts, - d
x/d
Ts, is 0.003°C
-1 for all the intensity ratio concerned (
np/
nAs = 211). The sticking coefficient of P is found to vary inversely proportional to substrate temperature.
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