Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 25, Issue 2
Displaying 1-3 of 3 articles from this issue
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  • Etching Characteristics of Chromium Film in Planar Type Plasma Reactor
    Hideo SAEKI, Yaichiro WATAKABE, Hiroyasu TOYODA, Tadashi KASHIWAGI
    1982 Volume 25 Issue 2 Pages 49-55
    Published: February 20, 1982
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.25.49
    JOURNAL FREE ACCESS
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    This paper described the etching characteristics of chromium film in the planar type plasma reactor. In addition, the etch rate of electron beam (EB) resists and the anomalous etched chromium films will also be discussed.
    Under the conditions when the gas pressure is 27 Pa, the gas flow rate ratio of CCl4 to O2 is 0.5, the electrode separation is 80 mm and the rf power density of 0.38 W/cm2 is applied to the lower electrode at 13.56 MHz, the following results are obtained. (1) The etch rate of chromium film is about 30 nm/min, the etch rate of both the polystyrene and the epoxy type EB resists are about 15 nm/min and 60 nm/min, respectively. (2) Resistance of the polystyrene type EB resist for the plasma etching is the same or better than that of AZ-1350 photoresist. (3) The standard deviation (3σ) of the chromium feature size within 6-inch Cr-mask is 0.169 μm. (4) The anomalous etched chromium films include a little impurity of copper.
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  • Preparation of Amorphous Si : H Films by rf Planar-Magnetron Sputtering
    Infrared Absorption and Photoelectric Properties
    Masaaki USUI, Takeshi KUJIRAI, Takao NAGATOMO, Osamu OMOTO
    1982 Volume 25 Issue 2 Pages 56-62
    Published: February 20, 1982
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.25.56
    JOURNAL FREE ACCESS
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    Amorphous Si : H films have been prepared by rf planar-magnetron sputtering. Deposition of amorphous Si : H films was attempted under various sputtering conditions as follows. Substrate temperature : 250 °C, rf input power : 25145 W, Ar/H2 gas ratio : 60/40, gas pressure : 1×10-31×10-4 Torr (0.1313 Pa). A detailed study of these films has been carried out using infrared absorption, dc dark- and photo-conductivity, optical energy gap and activation energy measurements. These results indicate that the high-quality a-Si : H films included many Si-H bonds are prepared as the gas pressure is low and the rf input power is large.
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  • Preparation of Ti-Fe Alloy Films by Sputtering from Composite Targets with Fine Metal Wires
    Noriaki KURITA, Yasuhiro IGASAKI, Hiroji MITSUHASHI
    1982 Volume 25 Issue 2 Pages 63-68
    Published: February 20, 1982
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.25.63
    JOURNAL FREE ACCESS
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    TixFe1-x films were successfuly prepared by sputtering from composite cathodes. The cathode consisted of fine wires of one metal and a disk of the other metal. It was found that films of any composition (x) could be prepared. Using substrates with lengths larger than separations between the target wires, we could prepare resistor films with excellent uniformity in compositions. From the present study it was found that the sputtered atoms had large diffusibility on the deposited sufaces.
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