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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 50, Issue 11
Displaying 1-10 of 10 articles from this issue
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Special Issue: Nitrization of Extreme Surface—Its Control and Measurement—
Review
  • Present Progress on Theoretical Studies of Stability and Electronic Structures of Silicon Oxynitride Thin Film
    Kentaro DOI, Seiichi YOSHIDA, Hiroki UEHARA, Toshio SAKAMOTO, Akitomo ...
    2007 Volume 50 Issue 11 Pages 647-651
    Published: 2007
    Released on J-STAGE: January 23, 2008
    DOIhttps://doi.org/10.3131/jvsj.50.647
    JOURNAL FREE ACCESS
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      Recent progress of complementary metal-oxide-semiconductor (CMOS) technology is remarkable and a lot of hot issues for science and technology have been published. Scaling down of the electronic devices is essential for their development but decreases their reliability. In such a small device, a dielectric thin film such as silicon dioxide is required to be the thickness of about 1 nm, and dielectric breakdown caused by leakage current is one of the serious problems. On the other hand, several methods are known to improve quality of the gate insulators. For example, nitridation of silicon dioxide is effective to suppress the leakage current and boron penetration, and employing high-k dielectrics is another way to decrease equivalent oxide thickness (EOT). In this article, nitridation process and dielectric properties of oxynitride thin film are especially focused on and reviewed by treating some important theoretical and experimental reports.
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  • Nitridation Mechanisms on Si(100) through Strong N Condensation
    Koichi KATO, Daisuke MATSUSITA, Koichi MURAOKA, Yasushi NAKASAKI
    2007 Volume 50 Issue 11 Pages 652-658
    Published: 2007
    Released on J-STAGE: January 23, 2008
    DOIhttps://doi.org/10.3131/jvsj.50.652
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      We studied N condensation behaviors in crystalline Si. N atoms introduced rapidly on Si(100) generate SiN agglomerated structures. We found that this agglomeration is induced by charge transfer between Si and N atoms, which is much stronger than those of silicon oxidation. N atoms introduced slowly on Si(100), however, stay at around the third layer from the topmost surface, leading likely to a stable Si-N network layer at around the same layer. This layer can be a seed layer for layer-by-layer Si3N4 growth on Si(100) along the vertical direction to the surface. Agglomeration and uniform growth of Si3N4 growth have been clearly observed by experimental techniques.
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  • Formation of High Quality Silicon Nitride Films using Microwave Excitation Plasma
    Akinobu TERAMOTO, Takashi ARATANI, Masaaki HIGUCHI, Eiji IKENAGA, Masa ...
    2007 Volume 50 Issue 11 Pages 659-664
    Published: 2007
    Released on J-STAGE: January 23, 2008
    DOIhttps://doi.org/10.3131/jvsj.50.659
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      The electric characteristics Si3N4 films the interface characteristics of Si3N4/Si formed by newly developed microwave-excited high-density plasma are described. The leakage current through the Si3N4 films reduces 3 orders of magnitude and the lifetime improves 30,000 times compared to the conventional SiO2 films formed by a thermal oxidation. The MISFET on Si(100) surface with gate insulator of Si3N4 films have more excellent performance compared to that with conventional SiO2 films. The crystal orientation of silicon wafer surface is affected to the subnitride at Si3N4/Si interface. The subnitride at Si3N4/Si decreases with an increase in Si atom density in the silicon wafer surface, as a result, the quantity of subnitride is lowest in Si(110) surface than any other surfaces. The valence band offset at Si3N4/Si interface is independent of a silicon wafer surface. Si3N4 films formed by the microwave excited plasma is essential to high performance and low leakage LSI devices.
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  • Initial Stage of Processes and Energy Bandgap Formation in Nitridation of Silicon Surface Using Nitrogen Radicals
    Hiroki KONDO, Shigeaki ZAIMA, Akira SAKAI, Masaki OGAWA, [in Japanese]
    2007 Volume 50 Issue 11 Pages 665-671
    Published: 2007
    Released on J-STAGE: January 23, 2008
    DOIhttps://doi.org/10.3131/jvsj.50.665
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      Initial stage of processes and energy bandgap formation in nitridation of silicon surfaces using nitrogen radicals have been studied. According to scanning tunneling microscopy observations and scanning tunneling spectroscopy measurements, at the initial stage of nitridation, linear defects perpendicular to dimmer rows were formed to coincide with an initial nitridation reaction preferentially at backbonds of surface Si atoms. After the nitride formation, the surface roughness depends only on substrate temperature regardless of radio frequency (RF) power, which means that the growth mode of nitrides is attributed to the surface migration. Contrary, the energy bandgap of silicon nitrides is significantly affected by not only substrate temperature but also RF power. Absorption and emission spectroscopy results suggest that the contribution of the excited-state nitrogen atoms to the nitridation increases with increasing the RF power. Control of surface migration and radical species is crucial to form the monolayer-thick nitride layer with both an atomically flat surface and a wide energy bandgap.
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Article
  • X-ray Photoelectron Spectroscopic Study of Nitrogen Depth Profile in Radical Nitrided Silicon Oxynitride Film
    Kazumasa KAWASE, Hiroshi UMEDA, Masao INOUE, Tomoyuki SUWA, Akinobu TE ...
    2007 Volume 50 Issue 11 Pages 672-677
    Published: 2007
    Released on J-STAGE: January 23, 2008
    DOIhttps://doi.org/10.3131/jvsj.50.672
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      The intensities of emission from N2+ and NH radicals in Ar/N2, Xe/N2 Ar/NH3 or Xe/NH3 plasma excited by microwave and the chemical bonding states of nitrogen atoms in silicon oxynitride film nitrided by using these plasmas were investigated. Depth profiles of composition and chemical structures in the oxynitride films were investigated by X-ray photoelectron spectroscopy combined with step etching in HF solution. The emission intensities from N2+ radical generated in Xe/N2, Ar/NH3 or Xe/NH3 plasma are less than a quarter of that from N2+ radical generated in Ar/N2 plasma. The emission from NH radical detected in Ar/NH3 or Xe/NH3 plasma is not detected in Xe/N2 or Ar/N2 plasma. The order of the nitrogen concentration near the film/substrate interface is Ar/NH3>Xe/NH3>Ar/N2>Xe/N2 plasma. Therefore, it is important for the reduction of the nitrogen concentration near the film/substrate interface to use Xe/N2 plasma in which both of the generation efficiencies of N2+ and NH radicals are low.
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Regular Papers
Article
  • Film Structure and Photo Absorption Spectrum of Crystalline GaTe Thin Films Growth by Radio-frequency Magnetron Sputtering Method
    Masanori OHYAMA, Hiroshi ITO, Manabu TAKEUCHI
    2007 Volume 50 Issue 11 Pages 678-682
    Published: 2007
    Released on J-STAGE: January 23, 2008
    DOIhttps://doi.org/10.3131/jvsj.50.678
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      Crystallized thin films of layered semiconductor GaTe were fabricated on silica glass by RF magnetron sputtering in H2 and Ar atmospheres. The structure and optical characteristics of these GaTe films were investigated by X-ray diffraction, atomic force microscope measurements and UV-Vis spectrophotometer measurements. The XRD patterns of the films deposited at substrate temperature up to 600°C in argon gas only showed an amorphours structure. The films fabricated with an H2 and Ar gas mixture were crystallized at a hydrogen mole fraction of more than 1 mol.%. Crystallinity and the orientation of the crystalline films showed a dependence on the hydrogen mole fraction. The photo absorption edges showed a direct transition with an optical gap of 1.57 eV, which was in good agreement with that of single GaTe crystals (1.66 eV). The processes of film deposition and crystallization were strongly affected by the presence of hydrogen.
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