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Volume 27, Issue 1
Displaying 1-5 of 5 articles from this issue
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Akira MIYAHARA1984 Volume 27 Issue 1 Pages 6-12
Published: January 20, 1984
Released on J-STAGE: January 28, 2010
JOURNAL FREE ACCESSDownload PDF (1450K) -
Hiroyuki ISHIDA, Satoshi INOUE, Hideki SIMIZU, Mikio NODA1984 Volume 27 Issue 1 Pages 13-18
Published: January 20, 1984
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSIn most experiments of RF sputter deposition of a-Si : H films, the depositing temperature is measured at the surface of the base plate (anode plate), but it exists great difference in temperature between the surface of depositing films and that of the electrode plate.
Especially, when KBr is used as the substrate material and pure H2 is introduced as atmospheric gas, the difference increases, probably because of chemical reaction between KBr and H2. This paper describes the detailed relationships between the temperature at the depositing surface and that of the base plate, with respect to the sputtering conditions.
It is concluded that the depositing temperature can not be represented by the substrate temperature.View full abstractDownload PDF (865K) -
Masahiko INOUE, Kazuyuki UEDA1984 Volume 27 Issue 1 Pages 19-23
Published: January 20, 1984
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSA method of surface structure analysis from RHEED (Reflection High Energy Electron Diffraction) pattern is proposed. RHEED pattern on the planar fluorescent screen can be converted to an intersection of reciprocal lattice rods of the crystal by means of geometrical conversion. This method has the advantage of an observation of super structure on single crystal surfaces. The converted pattern is substantially identical to the “Ino's pattern” observed using a spherical screen and mirror.View full abstractDownload PDF (568K) -
Glow Discharge Excitation FrequencyYutaka HAYASHI, Masaaki SATO, Mitsuyuki YAMANAKA, Isao SAKATA, Atsuo I ...1984 Volume 27 Issue 1 Pages 24-28
Published: January 20, 1984
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSTo eliminate standing wave effect in RF glow discharge decomposition equipments, use of low frequency glow discharge excitation is one of hopeful alternative. Effect of glow discharge excitation frequency on growth rate and film quality of a-Si : H decomposed from SiH4 was experimentally examined. Growth rate of the film on a conductive substrate increased as the excitation frequency decreased, while growth rate of the film on a insulating (glass) substrate remained constant. Bonded hydrogen and optical gap of the film slightly increased as the frequency decreased. Photoconductance of the fim remained relatively constant around 10-4 S/cm for AM1 60 mW insolation. Rectified wave excitation showed interesting results i.e high photoconductance with highest growth rate. The effect on the p-i or i-n junction characteristics was left to be the next subject to be examined.View full abstractDownload PDF (679K) -
Okikazu HIRABARU, Hisashi ARAKI, Teruo HANAWA1984 Volume 27 Issue 1 Pages 29-34
Published: January 20, 1984
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSLead oxide films which were heated at 880-900 °C, followed by the vaporization at 750-850 °C, and vacuum deposited showed the phenomena of cold emission and negative resistence by the electric-forming. The lead oxide films are detected emission current by application lower voltage, compared with SnO2 films.
The phenomena depended critically on the crack of about 1 (μm) in the films and island structures. The I-V characteristics of the lead oxide films and the relation of their film voltage Vp at which the peak current occurs and energy gaps was qualitatively agreement with Simmons' theory. Therefore, I-V characteristics of planer type device is explicable in a similar as sandwich type device by Simmons' model.View full abstractDownload PDF (989K)
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