Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Search
Advanced search
OR
Browse
Search
Volume 27, Issue 6
Displaying 1-4 of 4 articles from this issue
Show all abstracts
    • |<
    • <
    • 1
    • >
    • >|
  • Present Status on Photoelectron Spectroscopic Studies of Adsorbed CO
    Katsumi TANAKA, Isamu TOYOSHIMA
    1984 Volume 27 Issue 6 Pages 507-516
    Published: June 20, 1984
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.27.507
    JOURNAL FREE ACCESS
    Download PDF (1450K)
  • Low Temperature Epitaxy for the Three Dimensional ICs
    Kunihiko TAKAHAMA, Hiroyuki AOE, Hiroshi HANAFUSA, Keita KAWAHARA, Yos ...
    1984 Volume 27 Issue 6 Pages 517-521
    Published: June 20, 1984
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.27.517
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    To fabricate three dimensional ICs, an epitaxy technology that is usable under 900°C is required. For this purpose, new fabrication technologies for single crystal silicon, insulating layers, and electrode films have been investigated. As a result, desirable single crystal films in the structure of Si/Si, Si/sapphire and MoSi2/Si were obtained by means of ionization vapor deposition (IVD) at 750°C at the deposition rate as high as 0.5 μm/min. The impurity concentration of the film is controllable, and the mobility has been reached nearly to the bulk Si level. On the other hand, single crystal films in the structure of MgO·Al2O3/Si were obtained at the deposition temperature of 900°C by means of CVD epitaxy. Using these two epitaxy methods (IVD and CVD), single crystal films in the structure of Si/MgO ·Al2O3/Si have been fabricated successfully.
    View full abstract
    Download PDF (1665K)
  • Formation and Wear Resistant of Hafnium Carbide Film by Low Pressure Chemical Vapor Deposition
    Moriaki FUYAMA, Mitsuru URA, Masanobu HANAZONO, Haruhiko HONDA
    1984 Volume 27 Issue 6 Pages 522-529
    Published: June 20, 1984
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.27.522
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    Hafnium carbide films were formed on cemented carbide tools by low pressure chemical vapor deposition. The physical and mechanical properties of the films were investigated and the films were found to show good adhesion and no porosity. Vickers hardness, lattice parameter and carbon content of the films were as same as those for hafnium with stoichiometric composition.
    The wear resistance of hafnium carbide coated tools was compared with that of titanium coated carbide tools. The mean flank wear, end flank wear, and crater wear of the hafnium coated tools were smaller than those of titanium coated toos, however grooving wear was larger. The poor grooving wear resulted from oxidation of hafnium in the cutting test.
    View full abstract
    Download PDF (1789K)
  • Study of Electron Stimulated Desorption Ion Angular Distribution from CO/Mo (110) System
    Kazuyuki UEDA, Masahiko INOUE
    1984 Volume 27 Issue 6 Pages 530-534
    Published: June 20, 1984
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.27.530
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    A display-type apparatus for observation of LEED and ESDIAD (Electron Stimulated Desorption Ion Angular Distribution) has been constructed. In the present experiments, carbon monoxide was adsorbed onto the nearly clean (110) plane of molybdenum. An observed ESDIAD pattern from the CO adsorbed Mo (110) has a center spot and two outer spots in the direction of [110] and [112]. This pattern changes depending on the position of irradiating beam.
    On the other hand, LEED pattern from Mo (110) obtained after flashing was split along [332] direction. This splitting pattern reflects the surface configuration of Mo (110), which contains steps induced by heating treatments. It is suggested that ions ascribed to outer spots of ESDIAD pattern desorb from step edges on Mo (110) surface.
    View full abstract
    Download PDF (798K)
    • |<
    • <
    • 1
    • >
    • >|
feedback
 Top