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Volume 31, Issue 11
Displaying 1-5 of 5 articles from this issue
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Junzo ISHIKAWA1988 Volume 31 Issue 11 Pages 889-898
Published: November 20, 1988
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSDownload PDF (1290K) -
Takashi FURUYA, Yasuaki SUGIZAKI, Hiroshi SATOH1988 Volume 31 Issue 11 Pages 899-905
Published: November 20, 1988
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSDownload PDF (1077K) -
A New Design of CMAKeisuke GOTO, Hiroshi IWATA, Yuzi SAKAI1988 Volume 31 Issue 11 Pages 906-912
Published: November 20, 1988
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSA new cylindrical mirror analyzer (CMA) was designed to measure the absolute Auger electron yield and to offer the standard spectra in the Auger electron spectroscopy (AES). An ideal logarithmic potential distribution, which is the heart of the CMA, can be attained by only adjusting the location of the potential gap at the both ends of the CMA without using conventional fringing field correcting electrodes. The effects of residual magnetic field was also discussed and the attenuation characteristics of the μ-metal shield was presented.View full abstractDownload PDF (966K) -
Toshimichi ITO, Yoshihisa KATO, Akio HIRAKI, Mamoru SATOU1988 Volume 31 Issue 11 Pages 913-921
Published: November 20, 1988
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSAnodized porous silicon (PS) has been investigated mainly in relation to its initial oxidation and metal silicidation by means of infrared (IR) spectroscopy, electron spectroscopy and high energy ion scattering. The results show that hydrogen atoms chemisorbed to Si atoms on internal pore surfaces during the anodization are neither desorbed nor reacted with oxygen atoms at the oxidation at low temperatures <183°C. The initial oxidation is characteristic of a diffusion-limited process with an activation energy of 0.6 eV. The relation between oxidations of bulk Si and the present results is discussed. On the other hand, a re-distribution of Ti in TiSi2 grown on PS has been observed when the specimen with un-reacted PS layer below the TiSi2 is re-annealed at high temperatures (950°C). An application of PS to the metal silicidation where the lateral growth can be reduced is also discussed.View full abstractDownload PDF (1339K) -
Katsumi TAKIGUCHI, Masaaki YOSHITAKE, Sohichi OGAWA, Tsunemi OHIWA1988 Volume 31 Issue 11 Pages 922-928
Published: November 20, 1988
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSTantalum oxide thin films were prepared by reactive sputtering in the mixture of argon and oxygen. Total sputtering pressure was kept at constant of 1.5×10-3 Torr and oxygen pressure was varied from zero to 1.0×10-4 Torr. The metallic film of β-Ta structure was predominantly formed in lower pressure region. When oxygen pressure was increased up to the specific value, the film suddenly became transparent and its crystalline structure was amorphous.
Optical energy gap of the transparent films increased with increasing oxygen pressure, while their refractive index remained almost constant. From AES measurement, the ratio of tantalum to oxygen was about 2 : 4.6 and this ratio was independent of oxygen pressure.
Experimental results on dielectric properties of the film sputtered in Ar and O2 mixture were scattered. By adding a suitable amount of nitrogen to the Ar and O2 mixture, dielectric properties of the film was improved.View full abstractDownload PDF (641K)
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