Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 16, Issue 10
Displaying 1-4 of 4 articles from this issue
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  • Attainment of a Clean Vacuum -Problems on Pumping Systems and Chamber Walls-
    I. Clean Pumping Systems and Contamination by Oil Vapor
    Souji KOMIYA
    1973 Volume 16 Issue 10 Pages 352-357
    Published: October 20, 1973
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.16.352
    JOURNAL FREE ACCESS
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  • Surface Layer Analysis by MeV Ion Backscattering Techniqne (III)
    Akio HIRAKI
    1973 Volume 16 Issue 10 Pages 358-365
    Published: October 20, 1973
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.16.358
    JOURNAL FREE ACCESS
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  • Transmitted Secondary Electrons from GaAs Thin Films
    Chozaburo MINAGAWA, Shigetomo YOSHIDA
    1973 Volume 16 Issue 10 Pages 366-371
    Published: October 20, 1973
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.16.366
    JOURNAL FREE ACCESS
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    Structural and electrical measurements have been carried out on GaAs films deposited by three temperature method for substrate temperatures between 100° and 550°C. The films deposited below 230 °C exhibited low resistivity and above 450°C high resistivity (106Ω·cm). Half width and most probable energy of energy distribution of secondary electrons from these films were also measured. The films deposited below 230 °C exhibited large values of the half width (3.8 eV) and the most probable energy (1.5 eV), and above 450°C small values (2.5 eV and 1.0 eV), respectively. From these results it may be considered that the films deposited below 230°C are amorphous or metallic and above 450°C semiconductor.
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  • Soft X-ray Appearance Potential Spectrum of Silicon Carbide
    Yasuo IGUCHI
    1973 Volume 16 Issue 10 Pages 372-376
    Published: October 20, 1973
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.16.372
    JOURNAL FREE ACCESS
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    A soft x-ray appearance potential spectrum of SiC has been measured in a region of accelerating potential from 55 to 325 volts. Powder of α-SiC was spread over a copper target and bombarded by electrons emitted from a tungsten filament. Accelerating potential of the electrons was modulated by A. C. voltage of 3 volts at the frequency of 1 kHz. Differential soft x-ray yield was measured as a function of the accelerating potential by means of a BeCu photomultiplier followed by a lock-in amplifier. Resolution of the spectrum is estimated at 8 volts from the applied voltage of the filament as well as the modulation voltage. The observed spectrum shows a low but sharp maximum at 100 volts and a large and broad maximum at 132 volts, and gross structures of the spectrum correspond with those of the silicon L2·3 photoelectric yield spectrum. Therefore, the spectrum is interpreted to be proportional to the differential self convolution of the excitation probability. The maximum at 132 volts is assigned as a structure due to delayed onset of 2p-3d transition.
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