Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 26, Issue 9
Displaying 1-4 of 4 articles from this issue
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  • The Principles of Magnetic Bearings and Their Applications
    Hisaji SHIMIZU
    1983 Volume 26 Issue 9 Pages 705-710
    Published: September 20, 1983
    Released on J-STAGE: January 28, 2010
    DOIhttps://doi.org/10.3131/jvsj.26.705
    JOURNAL FREE ACCESS
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  • The Step Morphologies Related to Crystal Growth on the Deposited Film Surfaces of Straight Chain Molecular Substance
    Kimio INAOKA, Kiyoshi ISHIKI, Kiyotaka SATO, Masakazu OKADA
    1983 Volume 26 Issue 9 Pages 711-718
    Published: September 20, 1983
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.26.711
    JOURNAL FREE ACCESS
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    The surface morphologies of vacuum-deposited stearic acid films have been observed by replica electron microscopy. The crystal structure examined was monoclinic. Lateral and adhesive growth modes were observed under the following conditions; the deposition rate : 45 nm/min and 1.8 nm/min, the substrate temperature : -50°C, -20°C and 25°C, and the film thickness : about 320 nm. Spiral growth steps and closed loops revealed on the surfaces grown with the lateral growth mode. A “fan-shaped growth hillock” showed the most peculiar step morphology, which consists of a circular step segment with one side and of a trancated polygonal one with the other side along the symmetric a-axis. These fan-shaped growth hillocks were observed only on the vapor-grown surfaces.
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  • ESCA and Electron Diffraction Studies of InP Surface Heated under As Molecular Beam Exposure
    Hideo SUGIURA, Masafumi YAMAGUCHI, Atsushi SHIBUKAWA
    1983 Volume 26 Issue 9 Pages 719-725
    Published: September 20, 1983
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.26.719
    JOURNAL FREE ACCESS
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    Chemical composition of InP substrate surface heattreated under As molecular beam exposure in an ultrahigh vacuum chamber was studied with ESCA, and surface reconstruction of the substrate was examined by in-situ electron diffraction. The InP substrate heated under the exposure of As molecular beam has mirror surface up to 590°C while the surface of InP heated above 400°C in vacuum is roughened. The ESCA study shows that thin InAs layer (thickness<20Å) is formed on the surface of InP heated above 500°C under the exposure of As. The electron diffraction study indicates that the InP is cleaned at about 500°C in As pressures of 10-7-10-5 Torr. The InP surface is prevented from thermally decomposing by the coverage of the InAs layer, which may be formed through the following process :
    2InPO4+As4→2InAs+P2O5↑+As2O3↑.
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  • On the Field Emission Microscope with a Base Pressure of 10-10 Pa
    Chuhei OSHIMA, Ryutaro SOUDA, Masakazu AONO, Yoshio ISHIZAWA
    1983 Volume 26 Issue 9 Pages 726-730
    Published: September 20, 1983
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.26.726
    JOURNAL FREE ACCESS
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    The field emission microscope with a low base pressure has been constructed for studying the stability of the emission Using a diffusion pump with a liquid nitrogen trap (2001/s) combined with a sublimation pump (8001/s), the system has been routinely evacuated to 10-10 Pa.
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