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Volume 21, Issue 11
Displaying 1-5 of 5 articles from this issue
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Tamiji HISAKI, Goro NEGISHI, Shuntaro WATANABE, Hiroshi KASHIWAGI1978 Volume 21 Issue 11 Pages 365-371
Published: November 20, 1978
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe successful development of dielectric mirrors has been made in the wavelength region below 250nm for a KrF laser. Pairs of HfO2-SiO2 and ZrO2-SiO2 were selected for alternate layers of dielectric mirrors. A simple method with use of a transmittance curve was derived to determine the refractive index of the layer for the design of mirror.
The terminal reflectors with 0% transmittance and output couplers with 70-30% transmittance were made of 2324 and 16 layers respectively. The output energy of a KrF laser was measured with these various reflectors installed as a resonator, and it was resulted in the maxmum output energy of 270 mJ. The damage threshold was also measured to be 2-3 J/cm2.View full abstractDownload PDF (779K) -
Mamoru MOHRI, Kazuyuki NAKAMURA, Kuniaki WATANABE, Toshiro YAMASHINA, ...1978 Volume 21 Issue 11 Pages 372-378
Published: November 20, 1978
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe interaction of energetic ions such as H+, D+, He+ and Ar+ against the surface of silicon carbide which will be a promising material for the first wall in a controlled thermonuclear reactor (CTR) has been studied by means of an AES-IMA combined system (AID). The erosion yields of silicon carbide with these ions were measured by a volumetric method in dependence on incident ion energy and temperature of the target. A maximum erosion yield was observd at the incident energy around 8 keV for H+ ions and the yield decreased gradually as temperature of the target increased up to 1000°C, while small increase was observed by He+ ions. This difference could be attributed to chemical sputtering to form hydrocarbon and silicon hydride during hydrogen ion bombardment, since the amount of secondary ions formed through the chemical sputtering decreased as heating the target.View full abstractDownload PDF (811K) -
Hideo SHINAGAWA, Yuji KAWAMURA1978 Volume 21 Issue 11 Pages 379-385
Published: November 20, 1978
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe Monte Carlo method pertinent to the analysis of Knudsen flow through periodically constricted pores composed of many unit pores was proposed.
The determinations of the transmission probability for the pore systems to 15th connections are capable by the present method.
On the basis of calculated transmission probability, the conductances for fully developed free molecule flow in the pore system are obtained.
The path factors (constriction factors) for free molecule, laminar flow and diffusion in the pore systems are predicted, according to the reported analyses. It reveals that the path factor for laminar flow is larger than that for free molecule flow.
The equivalent capillary equation for the packed bed of spherical glass beads was derived on the basis of path factor for free molecule flow. The predicted permeability and observed one under free molecule regime are in good agreement.View full abstractDownload PDF (913K) -
Tetsuya SUGIYAMA, Osamu SHIMADA, Tadatsugu ITOH1978 Volume 21 Issue 11 Pages 386-391
Published: November 20, 1978
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe effect of ions on the carrier concentration of Ga- or Sb-doped silicon epitaxial films grown by part ionized vapor deposition on (111) silicon substrates is investigated. The crystalline quality of films is examined by transmission electron microscopy and 350 keV proton backscattering method. The doping efficiency into these films is much higher than that of the films grown by ordinary vacuum deposition. The carrier concentration of the film increases proportionally to the ion contents in silicon vapor flow, and depends on the substrate (target) voltage with the value of Vmax which gives the maximum carrier concentration. Ga- or Sb-doped films show the different values of Vmax, respectively. This phenomenon is able to explain by means of the charge exchange process between silicon ions and dopant atoms in the silicon vapor flow.View full abstractDownload PDF (901K) -
Hiroshi GOKAN, Sotaro ESHO1978 Volume 21 Issue 11 Pages 392-397
Published: November 20, 1978
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSIon-beam etched pattern profiles for an oblique ion-beam incidence have been investigated. The ion-beam etching was performed using a Kaufman type ion gun and a rotating stage. Etched patterns show a unique side wall profile due to ion-beam, shadowing effect. The side wall angle discontinuously changes at the half point of the total etching depth. As the ion-beam incident angle increases, the bottom wall angle becomes lower, while the upper wall angle approaches normal to the sample plane. The bottom wall profile can be interpreted by a theoretical model, taking into consideration the time dependent ion-beam flux distribution. The lateral shift of the upper wall can be explained by considering both etching and redeposition.View full abstractDownload PDF (872K)
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