Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 18, Issue 1
Displaying 1-3 of 3 articles from this issue
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  • LaB6 and LaB6-BaB6 Cathodes
    Kazuhiko YAMANOUCHI, Yasuo WAGATSUMA, Kimio SHIBAYAMA
    1975 Volume 18 Issue 1 Pages 3-8
    Published: January 20, 1975
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.18.3
    JOURNAL FREE ACCESS
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    LaB6 and LaB6-BaB6 have been known as an emitter with high emission-current density. This paper decribes an experimental investigation of the thermionic emission properties of LaB6 and LaB6 (65mol%) -BaB6 (35mol%) using new cathode of low power heater in which the rod are supported by a boron-nitride. Moreover, instead of tugstenfilament, new cathode is built in an electron beam-exposure and the experiments generating a pattern on PMMA are performed. The experiment shows that the LaB6-BaB6 cathode are more excellent than LaB6 cathodes in the themionic emission properties.
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  • Structure Analysis of Evaporated Films in Scanning Electron Microscopy
    Takashi NAGATANI, Minoru SAITO
    1975 Volume 18 Issue 1 Pages 9-14
    Published: January 20, 1975
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.18.9
    JOURNAL FREE ACCESS
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    This paper experimentally evaluates the structure of evaporated films commonly employed by SEM users to prevent charging, to reduce specimen damage, and to enhance secondary electron emission. Films of gold, gold-palladium, gold-platinum, platinum-palladium, and chromium were deposited with and without a coating of carbon. The structure of films was studied by high resolution transmission and scanning electron microscopy.
    The size of the islands formed is a function of the amount of metal evaporated and the vacuum conditions. As the vacuum level was changed from 2×10-5 to 1×10-3 Torr, the shadowing effect decreased. Thus, for uniform surface coverage, lower vacuum may be preferable; however, this is at the expense of increased amounts of metal for evaporation. By using an air jet pointed at the specimen surface, the same effect of uniform surface coverage is obtained, but without requiring additional metal.
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  • The Microanalysis Using Backscattering Method
    Katsuhiro TSUKAMOTO, Youichi AKASAKA, Kazuo HORIE
    1975 Volume 18 Issue 1 Pages 15-22
    Published: January 20, 1975
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.18.15
    JOURNAL FREE ACCESS
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    A new microanalysis using backscattering method was applied to measure lateral distributions as well as depth distributions of impurities in semiconductors. High energy He+-beam from the Van de Graaff accelerator could be squeezed to 70500μmφ on the target by means of the quadrupole magnetic lens and slits system. The lateral distributions of impurities in semiconductors were measured by step scanning i.e, by using a goniometer which slides the targets along the direction perpendicular to the beam line with a minimum step of 10μm.
    The microanalysis was applied to measure the lateral and depth distributions of Au atoms at GaAs crystal surface sintered in the nitrogen atmosphere after Au evaporation to GaAs crystal surface. It was found that the lateral distributions were not uniform either on the surface or in the bulk. Au atoms were diffused abnormally to the deep region in GaAs crystals, and the concentration profiles of Au were not fitted to complementary error functions. Also presented are the measured results of distributions of Sn doped into Si by means of two different techniques, i.e, doped oxide method and CZ pulling method.
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