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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 49, Issue 5
Displaying 1-16 of 16 articles from this issue
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Special Issue: Surface and Interface Analysis by Ion Beams
Foreword
Reviews
Regular Papers
Letters
  • Density Functional Study on the Interaction of Hydrogen with Pt3Ti(111)
    Romel MOZO, Nelson ARBOLEDA Jr., Wilson DIÑO, Emmanuel RODULFO, ...
    2006 Volume 49 Issue 5 Pages 298-301
    Published: 2006
    Released on J-STAGE: April 24, 2007
    DOIhttps://doi.org/10.3131/jvsj.49.298
    JOURNAL FREE ACCESS
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      We investigate the catalytic property of the intermetallic compound Pt3Ti by studying the interaction of its (111) surface with hydrogen. Based on density functional theory, we obtain the 2-D PES to estimate the barrier for H2 dissociation, and the binding energy of H atom at different sites of the substrate. The observed energetics can be explained in terms of the role played by the Ti atoms in the compound. Our results show that the Ti atoms function as inactive components that dilute the concentration of the active Pt components thus making the compound less active than Pt towards hydrogen.
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  • Misreading of Pressure Measurement by Radiation, and Its Measures
    Masaya OISHI, Tetsuhiko YORITA, Yukiko TANIUCHI, Masazumi SHOJI, Hirot ...
    2006 Volume 49 Issue 5 Pages 302-305
    Published: 2006
    Released on J-STAGE: April 24, 2007
    DOIhttps://doi.org/10.3131/jvsj.49.302
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      In the SPring-8 Storage Ring, the pressure measured by Bayard-Alpert gauge near photon-absorber were not observed aging effects by a beam self-cleaning. As the result of investigations of this phenomenon, three causes of misreading of pressure measurement were found; (1) irradiation of the scattered X-ray to gauge head, (2) a large amount of electronic inflow to gauge head, (3) irradiation of the scattered X-ray to gauge cable. We took measures to the misreading, for example shielding of gauge heads and cables etc, and came to be able to measure pressure within tens of percent errors.
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  • Observation of the Unique Surface Morphology of Heavily Phosphorus Doped Silicon by Atomic Force Microscope
    Wenbiao YING, Yuichi SANO, Haruyoshi IGUCHI, Keiko WATANABE, Yoshitomo ...
    2006 Volume 49 Issue 5 Pages 306-309
    Published: 2006
    Released on J-STAGE: April 24, 2007
    DOIhttps://doi.org/10.3131/jvsj.49.306
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      Both morphology and chemical structure of heavily phosphorus-doped Si(100) samples were examined by using atomic force microscope (AFM) together with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy. The sample-A and sample-B were prepared by predeposition of POCl3 at 980°C and 910°C, respectively. The AFM images of sample-A showed unique shape like a crater in all over the wafer. The density of crater decreased from the center to the edge of the wafer, while accompanying an increase in the depth of crater. The whole morphology including the crater morphology became very smooth after heating treatment at 1000°C. The sample-B also exhibited another very unique geometrical AFM image with no crater pattern in all over the wafer. After heating treatment at 750°C, although the whole pattern did not change drastically, it was observed that the crater pattern appeared in the limited part. The difference of the surface morphology between sample-A and sample-B might be related with the processing temperature during the POCl3 deposition.
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  • Wafer Bonding by Surface Activated Method
    Tomohiro ODA, Tomoyuki ABE, Isao KUSUNOKI
    2006 Volume 49 Issue 5 Pages 310-312
    Published: 2006
    Released on J-STAGE: April 24, 2007
    DOIhttps://doi.org/10.3131/jvsj.49.310
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      Si-Si and quartz-quartz bonded wafers were fabricated using surface activated method by fast atomic beam sputtering. In the Si-Si bonded wafer fabricated by surface activated (dry) method non-bonding area decreased with heating at 300°C under a pressure, though in the Si-Si bonding wafer prepared by H2SO4+H2O2 chemical-treatment non-bonding area increased with heating at 300°C. Gas sealed in the non-bonding area was analyzed with a quadrupole mass spectrometer by cracking the wafer in vacuum. The main species of the gas was water (18 emu). The strength of the bonding between the Si-Si wafers bonded by surface activated method was 20 MPa even at non-heating. This is as strong as the bonding of the Si-Si wafer bonded by heating at 1000°C after H2SO4+H2O2 chemical treatment. The bond strength of the quartz-quartz wafer prepared by surface activation and heating at 700°C is similar to that of the wafer bonded by H2SO4+H2O2 chemical treatment and heating at 700°C.
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  • Dynamical Low-energy Electron Diffraction Analyses of Clean and H-adsorbed Ir(111) Surfaces
    Masuaki MATSUMOTO, Syohei OGURA, Katsuyuki FUKUTANI, Tatsuo OKANO, Mic ...
    2006 Volume 49 Issue 5 Pages 313-316
    Published: 2006
    Released on J-STAGE: April 24, 2007
    DOIhttps://doi.org/10.3131/jvsj.49.313
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      Structures of Clean and H-adsorbed Ir(111) surfaces were studied by dynamical analyses of low-energy electron diffraction (LEED). LEED pattern for the Clean Ir(111) surface was 1×1. Dynamical analysis of LEED spot intensity vs incident electron enegy (I-V) curves for the clean Ir(111) surface revealed that the layer distance between the 1st and the 2nd layers (d12) equals to 0.2207±0.002 nm, which is almost equal to the bulk value (0.2217 nm). It appears that our result contradicts an previous report, which concluded that d12 equals to 0.216 nm which is 2.6% smaller than the bulk value. However their error bar was so large (±0.01 nm) that it is suggested that our result is the accurate atomic structure of the clean Ir(111) surface. LEED pattern was almost unchanged by H adsorption of 1 ML (1.56×1015 cm-2) at 80 K. The difference between LEED I-V curves before and after hydrogen adsorption was very small and it was impossible to determine the adsorption structure on Ir(111) but it can be conculded that no reconstruction occurs and only a very small relaxation occurs by the adsorption of hydrogen on Ir(111) surface.
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  • High Resolution Rutherford Back Scattering Estimation of the Surface Implanted Nitrogen Ion by Using Plasma-based Ion Implantation
    Takeshi TANAKA, Toshinori TAKAGI
    2006 Volume 49 Issue 5 Pages 317-319
    Published: 2006
    Released on J-STAGE: April 24, 2007
    DOIhttps://doi.org/10.3131/jvsj.49.317
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      Plasma-based ion implantation (PBII) with negative voltage pulses to the test specimen has been applied to the sterilization process as a technique suitable for three-dimensional work pieces. Pulsed high negative voltage (5 μs pulse width, 300 pulses/s, -800 V to -15 kV) was applied to the electrode in this process at a gas pressure of 2.4 Pa of N2. We found that the PBII process, in which (N2 gas self-ignitted plasma generated by only pulsed voltages is used) reduces the numbers of active Bacillus pumilus cell. The number of bacteria survivors was reduced by 10-5 x with 5 min exposure. As the ion energy is one of the important processing parameters on sterilization of the surface, the ion energy is discussed from the high resolution RBS depth profile.
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  • Heteroepitaxial Growth of SiC Nano-dots by Organometallic Ion Beam
    Takashi MATSUMOTO, Masato KIUCHI, Satoshi SUGIMOTO, Seiichi GOTO
    2006 Volume 49 Issue 5 Pages 320-322
    Published: 2006
    Released on J-STAGE: April 24, 2007
    DOIhttps://doi.org/10.3131/jvsj.49.320
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      Silicon carbide (SiC) is a remarkable material for electronic and optoelectronic device applications. Using the organometallic ion beam deposition, the heteroepitaxial SiC nano-dots were fabricated on Si(100) substrate at the low-temperatures (500-800°C). The formation of the SiC nano-dots was performed by the low-energy ion beam deposition system. The single precursor of methylsilicenium ion (SiCH3+) was generated from dimethylsilane (SiH2(CH3)2) plasma. The ion beam was extracted at 25 keV, and mass-selected by a sector magnet. The SiCH3+ ions were decelerated to 100 eV in front of Si(100) substrate. The SiC nano-dots formed on Si(100) were heteroepitaxial 3C-SiC(100). The size of the SiC nano-dots was the length of 100-200 nm and the height of 10-30 nm. The SiC nano-dots formed by the organometallic ion beam deposition showed the nano-tile structure.
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  • Dependence of Surface Differential Reflectance Spectra on the Incident Photon Energy during Initial Oxidation on Si(001)
    Jun-ichi TAKIZAWA, Jun-ya KOIZUMI, Shin-ya OHNO, Ken-ichi SHUDO, Masat ...
    2006 Volume 49 Issue 5 Pages 323-326
    Published: 2006
    Released on J-STAGE: April 24, 2007
    DOIhttps://doi.org/10.3131/jvsj.49.323
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      Initial oxidation process on Si(001) is studied by means of surface differential reflectance (SDR). At high temperatures (820 and 920 K), time-course of the reflectance spectra (ΔR/R) was found to represent the oxygen coverage, and to discriminate the two growth modes, Langmuir-type adsorption and two-dimensional island growth. At room temperature, significant photon energy dependence was observed in the time-course profiles of ΔR/R. This indicates that the partial oxygen coverage at the different adsorption sites may be estimated from them. From the temperature-dependence of the spectral time-courses, two components in the SDR spectra at 1.4 eV and 2.6 eV, were separately analyzed. Different activation energies were obtained from the Arrhenius plots. The results were discussed in terms of the possible assignments of these components.
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  • Oxidation-Induced Changes of Work Function and Interfacial Electronic States on Si(001) Surfaces Studied by Real-Time Ultraviolet Photoelectron Spectroscopy
    Shuichi OGAWA, Yuji TAKAKUWA
    2006 Volume 49 Issue 5 Pages 327-330
    Published: 2006
    Released on J-STAGE: April 24, 2007
    DOIhttps://doi.org/10.3131/jvsj.49.327
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      The oxidation reaction kinetics on a Si(001)2×1 surface was investigated by real-time ultraviolet photoelectron spectroscopy to measure the changes of work function and band bending with the oxygen uptake. By analyzing a spectral shape of the low-energy cutoff in secondary electron spectra, it was found that two values of work function can be obtained for the surface oxidation manner of two-dimensional oxide island growth; one corresponds to the unoxidized clean surface area and the other to the growing oxide island. At the initial stage of oxide island nucleation in this oxidation manner, it was observed that the changes of band bending and work function due to the surface dipole layer originating from a charge transfer of adsorbed oxygen were very small, although they were quit significant under the oxidation manner of Langmuir-type adsorption. Based on the observed changes of band bending and work function, the behavior of adsorbed oxygen in the two-dimensional oxide island growth is discussed in comparison with that in the Langmuir-type adsorption.
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Conference Report
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