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Volume 25, Issue 9
Displaying 1-4 of 4 articles from this issue
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Kimio INAOKA, Fumiaki MATUZAKI, Kiyotaka SATO, Masakazu OKADA1982 Volume 25 Issue 9 Pages 597-604
Published: September 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSObservations on the film surfaces on stearic acid deposited onto the substrates of stearic acid, mica and NaCl single crystals have been made by the electron microscope in order to study the film formation and the growth mechanism of straight-chain molecular substance. Vacuum-deposition of stearic acid carried out at the deposition rates ranging from 5 Å/min to 50 Å/min. The residual gas pressure was 5×10-6 Torr and the temperature of the substrate during the deposition was 25°C. The island structures corresponding to nucleation and growth model were observed on the substrates of mica and NaCl. The some of the grains standing up from surface and the growth hills consisting of the fan shaped steps were observed. The minimum film thickness of the growth hills which appeared on the surfaces of the deposited stearic acid was 150 Å on the substrates of stearic acid and 300 Å on mica and on NaCl. The habits of the growth hills were B and C form on stearic acid and C form both on mica and on NaCl, whereas the deposited films were single crystal films. The film formations and the surface morphologies of stearic acid have been discussed.View full abstractDownload PDF (3638K) -
Toshiro ONO, Akira OZAWA, Hideo YOSHIHARA1982 Volume 25 Issue 9 Pages 605-612
Published: September 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe reactive ion etching of a polyimide film was investigated about undercut and etch residue on the etched surface. The pattern undercut results from the reaction proceeding between the polyimide film and the oxygen radical, and the etch residue is originated from the redeposition of non-volatile particles sputtered from the etching table. In O2 reactive ion etching using the carbon etching table, the carbon reacts with oxygen radicals and changes to CO or CO2 so as to reduce the pattern undercut and the etch residue simultaneously. The undercut width of the polyimide pattern is less than 0.04μm, so that the sub-micron x-ray mask absorber pattern is accurately obtained by electroplating using the polyimide pattern as the plating maskView full abstractDownload PDF (1512K) -
Naoto UCHIDA, Keiji ENPUKU, Keiji YOSHIDA, Fujio IRIE1982 Volume 25 Issue 9 Pages 613-623
Published: September 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSPbInAu Josephson tunnel junctions are fabricated by RF plasma oxidation procedure, and their properties are investigated quantitatively in order to diagnose junctions. From the comparison between theory and experiment of dc current-voltage characteristics, some basic parameters of the junction are obtained. The relation between junction parameters and the oxide barrier is also discussed from the change of junction parameters due to the aging effect. Futhermore, a method is given to determine the distribution of the critical current density from the dc current-voltage characteristic, and a uniformity of the oxide barrier is discussed by using this method.View full abstractDownload PDF (1300K) -
Toshihede NISHIMURA, Tsutomu TSUKADA, Hideo MITO1982 Volume 25 Issue 9 Pages 624-630
Published: September 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSDry etching characteristics of aluminum films in the parallel reactor have been reported using plasmas of CCl4 and CCl4/He. We have constructed the three dimensional maps on aluminum etching selectivity to photoresist. These results have revealed that the etching profiles vary depending on many experimental parameters and the characteristics maps obtained by the two plasma, CCl4 and CCl4/He, are very different.View full abstractDownload PDF (896K)
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