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Volume 23, Issue 2
Displaying 1-6 of 6 articles from this issue
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Tetsuo TANABE, Hirohiko ADACHI1980 Volume 23 Issue 2 Pages 55-67
Published: February 20, 1980
Released on J-STAGE: September 04, 2009
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Takashi OYABU, Susumu SAITO1980 Volume 23 Issue 2 Pages 68-75
Published: February 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSThe effect of topography of SiO films deposited obliquely was examined. Arrayed columnar structures were detected for films deposited at angles greater than 80°. And the pretilt angle θ of liquid crystal molecules on the surface of these films was determined to be about 40 °from the measurement performed for the ordinary pretilted cell using the magneto-capacitance null method. An abrupt change in θ was newly observed for films thicker than 500Å.θ was found to decrease gradually with increasing the substrate temperature from r.t. to 300°C. The voltage and angle-of-deposition dependences of transmittance and capacitance of a nematic liquid crystal cell are also presented.View full abstractDownload PDF (12432K) -
Kunihiko HARA, Yasutoshi SUZUKI1980 Volume 23 Issue 2 Pages 76-82
Published: February 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSPlanar magnetron rf-sputtering apparatus was used for the deposition of SiO2 films on silicon substrates. An anomalous etching phenomenon such as the sputtered SiO2 film was etched rapidly in part of it was found, the occurence of whi ch depended mainly on the incidence angle of the sputtered materials from target. Significant differences of stoichiometory and composition elements between the cegions of high and low etching rate were not observed.View full abstractDownload PDF (8185K) -
Kimio INAOKA, Eiji IWABUCHI, Kiyotaka SATO, Masakazu OKADA1980 Volume 23 Issue 2 Pages 83-90
Published: February 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSThe micromorphology and the formation of bismuth films deposited onto stearic acid substrate were observed by transmission electron microscope. Vacuum-deposition of bismuth onto stearic acid substrate, which was cleaved in air, was carried out at the deposition rates around 1Å/5 at a residual gas pressure of about 10-6 Torr. The temperature of substrate during deposition was kept at 15 °C. The triangular, the square, the trapezoidal and the hexagonal shapes of islands are typical in the various kinds of island structures of bismuth films. Thin bismuth films grew epitaxially on the cleaved surface of stearic acid at a temperature higher than 20 °C and there were two different preferable orientations of bismuth films for the crystallographic direction of the substrate. It is peculiar that stearic acid single crystal is quite within the bounds of possibility of the use as the substrate for epitaxy and that the epitaxial temperature of bismuth on stearic acid crystal is much lower than that on mica by more than 100°C.View full abstractDownload PDF (12763K) -
Hideki MITANI, Jiro FUKURA1980 Volume 23 Issue 2 Pages 91-95
Published: February 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSEvaporated silver films thicker than 2000 Å have been heat-treated for the two cases (1) as deposited and (2) after removal from the substrate, and the structure and internal stress have been observed by means of X-ray diffraction. Whether the substrate exists or not, the (111) orientation is enhanced at the early stage of annealing, and subsequently the grain coalescence takes place. Tensile stresses in the films, except specimens annealed at high temperature with substrates, are relieved through these processes. The stress generated by annealing is esti-mated to be thermal stress by the difference of the coefficient of expansion between the film and substrate.View full abstractDownload PDF (949K) -
1980 Volume 23 Issue 2 Pages 97
Published: 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSDownload PDF (104K)
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