Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Search
Advanced search
OR
Browse
Search
Volume 21, Issue 4
Displaying 1-3 of 3 articles from this issue
Show all abstracts
    • |<
    • <
    • 1
    • >
    • >|
  • Solar-selective Surface Utilizing Zirconium Carbide Film
    Shigeo EBISAWA, Hideo IHARA, Fujitoshi SHINOKI
    1978 Volume 21 Issue 4 Pages 113-119
    Published: April 20, 1978
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.21.113
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    A solar-selective surface with an excellent heat-resistance and optical quality has been developed from zirconium/ zirconium carbide stack. The surface film has been prepared by reactive rf-sputtering of pure Zr target in a gas mixture of methane and argon.
    The composition of the optically optimized film is about 6/1 in atomic ratio of C/Zr, which was determined to be a mixture of ZrC and carbon by ESCA. Solar absorptance and infrared reflectance of the surface are 90 and 95%, respectively. The optical property of the surface was stable up to 800°C.
    The solar absorptance of the carbon selective-surface can be increased by several percent when a thin oxide layer is overcoated.
    View full abstract
    Download PDF (929K)
  • Quantitative Analysis of Impurities by Auger Electron Spectroscopy
    B, P and As in Si and P in SiO2
    Kenzo FUJIWARA, Kiyoshi KANAYAMA, Makoto OHTANI, Hitoshi OGATA
    1978 Volume 21 Issue 4 Pages 120-126
    Published: April 20, 1978
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.21.120
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    Quantitative analysis of boron, phosphorus and arsenic in silicon and phosphorus in silicon dioxide has been made by Auger electron spectroscopy with the in situ ion milling technique. Ion-implanted species in polycrystalline silicon and silicon dioxide were used as standard samples. The experimental results indicate that the semi-empirical formalism for quantitative Auger analysis is valid for impurity concentration less than a few percent. Excellent linear relationship has been obtained between the implanted dose and the normalized Auger signal intensity within ±10% for boron and phosphorus and ±20% for arsenic. We also show matrix effects in quantitative analysis of phosphorus in silicon dioxide.
    View full abstract
    Download PDF (895K)
  • Adsorption of Fe on W
    Hyonu KIM, Takaei SASAKI, Kimio OKUNO
    1978 Volume 21 Issue 4 Pages 127-129
    Published: April 20, 1978
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.21.127
    JOURNAL FREE ACCESS
    Download PDF (464K)
    • |<
    • <
    • 1
    • >
    • >|
feedback
 Top