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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 24, Issue 11
Displaying 1-5 of 5 articles from this issue
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  • Radiometer Test Chamber
    Mitsuhiro IGUCHI, Yasuo NAKAMURA
    1981 Volume 24 Issue 11 Pages 579-587
    Published: November 20, 1981
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.24.579
    JOURNAL FREE ACCESS
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  • Tensile Fracture of Evaporated Au Films
    Tetsuya HOSAKA
    1981 Volume 24 Issue 11 Pages 588-593
    Published: November 20, 1981
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.24.588
    JOURNAL FREE ACCESS
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    Experiments were performed to investigate the tensile properties of gold films ranging from 300 to 800 Å in thickness, which were obtained by vacuum evaporation. A SEM observation of the fracture process was made directly in the electron microscope.
    The propagation was discontinuous and crystallographic, the fracture edges lying parallel to surface slip lines. The total strain of the film was usually of the order of 0.4 to 1.7% at fracture.
    Observation of the fracture process of these films were performed directly in a scanning electron microscope and a transmission electron microscope.
    Propagation of the fracture tip is discontinuous, and the fracture edge is parallel to the slip lines appearing at the surface of these films.
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  • The Electron Optical Characteristics of a Special Cathode Coated by LaB6 Films Made by Ion Bean Sputter Deposition for High Resolution Scanning Electron Microscops
    Kiichi HOJOU, Tetsuo TSUKAMOTO, Toshihiko GUNJI, Koichi KANAYA
    1981 Volume 24 Issue 11 Pages 594-599
    Published: November 20, 1981
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.24.594
    JOURNAL FREE ACCESS
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    This paper describes an experimental inverstigation of the thermionic emission properties of tungsten hairpin filament coated with lanthanum hexaboride films (LaB6) by meams of ion beam sputter deposition method.
    Measurement of brightness of the coated filament was parformed in a scanning electron microscope. As a result, the brightness of about 3.42×104 A/cm2·ster. (20 kV), was obtained by LaB6 coated tungsten hairpin filament.
    Furthermore, it was found that resolution measured from the intervals between latexes obtained by S-450 (SEM) with LaB6 coated was about 20 nm.
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  • Static Characteristics of a Three-Grid Modulated B-A Gauge
    Toru KANAJI, Toshio URANO
    1981 Volume 24 Issue 11 Pages 600-612
    Published: November 20, 1981
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.24.600
    JOURNAL FREE ACCESS
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    A modulated gauge, which is a special Bayard-Alpert gauge with two additional concentric grids inside the electron collector grid, was investigated. The static characteristics of this gauge for three modulation methods were measured and compared; the method of modulating the potential of the intermittent grid is considered to be the best.
    Much effort was made for the reduction of the modulation factors of background current (noise current). That is, the causes which induce the change of X-ray photo-current with the modulation, and the causes which induce the local pressure change by the change of electron stimulated gas desorption with the modulation, were carefully removed. Furthermore, to avoid the effects of reverse X-ray photo-emission and electron stimulated ion desorption, the intensities of the noise currents themselves resulting from these phenomena were reduced.
    The collector currents in the “on” and “off” states (Ion and Ioff) were measured at various pressures, and it was confirmed that the relationship between the difference-value (ΔI=Ion-Ioff) and the pressure was sufficiently linear down to 8×10-9 Pa (6×10-11 Torr). It is believed that this linearity is kept also in the lower pressure region, although this could not be confirmed because of the insufficient accuracy of the DC electrometer used in this study.
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  • Possibility of the Fabrication of Planar S-SC-S-Type Josephson Junctions Embedded in Semiconductors
    Gin-ichiro OYA, Hiroto INABE, Yasuji SAWADA
    1981 Volume 24 Issue 11 Pages 613-621
    Published: November 20, 1981
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.24.613
    JOURNAL FREE ACCESS
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    It has been confirmed that thin Si walls with the thickness of1000 Å can be fabricated on Si wafers by using an electron-beam lithography and a dry etching process. It has also been observed that superconducting V3Si layers, whose transition onset temperatures Tc.on are strongly correlated with their thicknesses, are formed by the interaction of V with SiOx. And it has been found that a double-layer structure VOx/V3Si/Si, or a triple-layer structure VOx/V3Si/SiOx/Si or VOxV3Si/V3Si1+α/Si can be obtained by annealing evaporated V films on thinly oxidized Si wafers between650 and 1000°C. Based on the obtained results the possibility of the fabrication of planar S-SC-S-type Josephson junctions having V3Si electrodes embedded in Si single crystal wafers has been discussed.
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