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Volume 25, Issue 11
Displaying 1-5 of 5 articles from this issue
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Fujitoshi SHINOKI, Hisao HAYAKAWA1982 Volume 25 Issue 11 Pages 705-714
Published: November 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSDownload PDF (1421K) -
Takao SHIOKAWA, Pil Hyon KIM, Susumu NAMBA1982 Volume 25 Issue 11 Pages 715-718
Published: November 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSFor etching, the ion beam produced by silane gas discharge is irradiated on the Si substrate.
In vertical incidence of the ion beam on Si, the film is deposited up to 3 kV which is the maximum acceleration voltage in the apparatus. By changing the angle of beam incidence θ, ethcing is possible. The maximum etching rate is 6.8 Å/min at the beam intensity of 20 μA/cm2, the acceleration voltage of 1 kV and θ ≈ 65°. The value is 1.4 times larger than the maximum etching rate in the use of Ar ion beam at the same beam intensity and acceleration voltage. At θ=65 °, Si is etched at the acceleration voltage above about 500 V.View full abstractDownload PDF (389K) -
Joshin URAMOTO1982 Volume 25 Issue 11 Pages 719-726
Published: November 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSA simple method for producing a sheet plasma with a large width and thin thickness is discribed, in which two rectangular permanent magnets are arranged on both sides of a cylindrical plasma along a magnetic field. Using the sheet plasma for ion plating, we can collect an ion current of high density for a large area in a very high gas and power efficiency.View full abstractDownload PDF (1371K) -
Shunji MISAWA, Sadafumi YOSHIDA, Shun-ichi GONDA1982 Volume 25 Issue 11 Pages 727-734
Published: November 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe growth process of β-SiC on sapphire (0001) and (1102) planes and Si (111) plane by reactive evaporation of Si in C2H4 or C2H2 gas has been investigated by reflection high energy electron diffraction. Polycrystalline SiC films with stoichiometric composition were obtained when the ratio of the incidence frequency of reactive gas molecules to that of Si atoms, γ, was greater than 140 at the substrate temperature Ts= 770°C for C2H4 reactive gas, and when γ was greater than 25 at Ts= 700 °C for C2H2 gas. Using C2H2 gas, epitaxial films of SiC were grown on sapphire at 1000°C. However only polycrystalline films were grown on Si at Ts≤1200 °C. When the Si surface was covered with a SiC buffer layer, 500Å thick, deposited at 770 °C, SiC films were grown epitaxially on the Si substrates at 1000°C. From the analysis of IR transmittance of the films on Si, it was concluded that no hydrogen atoms are contained in the films deposited by the reactive evaporation.View full abstractDownload PDF (1330K) -
Seiichi IWAMATSU, Juri KATO1982 Volume 25 Issue 11 Pages 735-741
Published: November 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSRecently, various transient annealing technologies have been intensively invesigated on activation of ionimplanted layers, using laser, electron beam, flash lamp, high-intensity arc-lamp, and solar radiation. But the application of these annealing technologies to device processing is still in its infancy.
This paper describes an application of halogen lamp annealing to the activation of ion-implanted silicon and to CMOS LSI processing.
The samples were heated with halogen lamps in nitrogen gas at an atmospheric pressure to 1200 °C for five seconds. This annealing activated the boron ions and phosphorus ions implanted layers and realized the same sheet resistivities as the furnace annealing (100 °C, 20 min.) with negligible dopant redistribution. 256 K CMOS ROM was fabricated using the halogen lamp annealing.
The advantage of halogen lamp annealing technology was shown in place of furnace annealing without changing conventional processing steps.View full abstractDownload PDF (1254K)
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