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[in Japanese], [in Japanese]
2004 Volume 47 Issue 6 Pages
409
Published: June 20, 2004
Released on J-STAGE: October 20, 2009
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Hiromu UEBA
2004 Volume 47 Issue 6 Pages
410-411
Published: June 20, 2004
Released on J-STAGE: October 20, 2009
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Kazuya WATANABE, Noriaki TAKAGI, Yoshiyasu MATSUMOTO
2004 Volume 47 Issue 6 Pages
412-417
Published: June 20, 2004
Released on J-STAGE: October 20, 2009
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Takanori SUZUKI
2004 Volume 47 Issue 6 Pages
418-424
Published: June 20, 2004
Released on J-STAGE: October 20, 2009
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Haruyuki SANO, Goro MIZUTANI
2004 Volume 47 Issue 6 Pages
425-430
Published: June 20, 2004
Released on J-STAGE: October 20, 2009
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Taka-aki ISHIBASHI, Hiroshi ONISHI
2004 Volume 47 Issue 6 Pages
431-438
Published: June 20, 2004
Released on J-STAGE: October 20, 2009
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Shen YE, Masatoshi OSAWA, Kohei UOSAKI
2004 Volume 47 Issue 6 Pages
439-445
Published: June 20, 2004
Released on J-STAGE: October 20, 2009
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Jun KUBOTA, Akihide WADA
2004 Volume 47 Issue 6 Pages
446-451
Published: June 20, 2004
Released on J-STAGE: October 20, 2009
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Hiroshi OKANO, Tomohiro MASUDA, Akihiro MICHIHISA, Koji HASEGAWA
2004 Volume 47 Issue 6 Pages
452-456
Published: June 20, 2004
Released on J-STAGE: October 20, 2009
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Aluminum nitride (AlN) thin films are very promising materials for piezoelectric devices. It is found from computed results that the layered structure, c-axis oriented A1N thin film on SiO
2/ (100) Si, will exhibit high phase velocity (4760 m/s) with high coupling coefficient (0.0075), whose value is more than that of quartz (0.0011). AlN thin films were deposited on glass substrate by RF reactive ion plating system. It was confirmed that the transmittance and deposition rate of AlN thin films depend on distance of antenna-substrate greatly. Deposition rate became small when distance of antenna-substrate was enlarged. Transmittance of AlN increases with increasing deposition rate at the deposition rate of less than 0.4 nm/s.
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Yuji TAKAKUWA, Shinji ISHIDZUKA, Akitaka YOSHIGOE, Yuden TERAOKA, Kous ...
2004 Volume 47 Issue 6 Pages
457-461
Published: June 20, 2004
Released on J-STAGE: October 20, 2009
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The oxidation reaction on the Ti (0001) surface at 400°C and 3.7 × 10
-6 Pa of O
2 pressure was observed in real time by photoelectron spectroscopy using synchrotron radiation to investigate the oxygen uptake curve and oxidation state during growth of very thin oxide. The oxygen uptake curve increased rapidly with a plateau at O
2 doses of 4585 L, where the Ti 2p intensity for the metallic Ti component due to the substrate also showed a plateau between rapid decreases. The restart of oxide growth following the plateau was observed to be associated with a drastic change of the oxidation state from TiO to TiO
2. Thus high-temperature oxidation on the Ti (0001) surface progresses through the initial rapid growth with preferential appearance of TiO and Ti
2O
3, subsequent temporary saturation of oxide growth and then rapid growth of oxide with significant changes of the oxidation state.
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Kunihiro NOBUHARA, Hideaki KASAI, Wilson Agerico DIÑO, Hiroshi ...
2004 Volume 47 Issue 6 Pages
462-466
Published: June 20, 2004
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We investigate the behavior of hydrogen on and into the metal surfaces. The potential energy curves (PECs) for the hydrogen adsorption on and absorption into the Mg (0001), Ti (0001), Ni (111) and La (0001) surfaces are calculated within the density functional theory. From the results, when the adsorbed hydrogen atom penetrates into the first layer of Mg (0001) and La (0001) surfaces, the energy barriers for hydrogen atom absorption are remarkably low, and the energy barrier on the Ti (0001) surface is also comparatively low. On the other hand, it is high on the Ni (111) surface. The results indicate a comparative ease in the penetration of hydrogen atom into Mg (0001), Ti (0001) and La (0001) surfaces, and not into Ni (111) surface. Furthermore, we can practically explain these differences among the surfaces by considering the differences in the lattice structure of the substrates. The distance between lattice points of substrate is large, that is, the absorption hole area on the first layer is large for the case of the Mg (0001), Ti (0001) and La (0001) surfaces, as compared to the Ni (111) surface.
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Hiroshi NAKANISHI, Tomoya KISHI, Hideaki KASAI, Fumio KOMORI
2004 Volume 47 Issue 6 Pages
467-469
Published: June 20, 2004
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We investigate the conductance through a Cu atom (Cu point contact) between a scanning tunneling microscope (STM) tip and a Cu (111) surface, within the density functional theory. On the basis of the numerical results, we show how its conductance changes with the position of the Cu point contact, as we break the contact between the STM tip and the Cu (111) surface.
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Masaaki NISHIKAWA, Kazuyoshi TAKESHITA, Takayuki HARAGUCHI, Yoshihiko ...
2004 Volume 47 Issue 6 Pages
470-472
Published: June 20, 2004
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Facing targets sputter deposition provides defect-less quenched films, which do not sustain plasma damage so much. In order to improve its low efficiencies of target erosion and deposition rate, gradient facing targets system, V cathodes, is proposed. Through this improvement the sputtering voltage is reduced about 5%, the deposition rate is doubled and the film thickness becomes more uniform in comparison with those for conventional facing targets.
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Nobuo SAITO, Isamu NAKAAKI, Hiromu IWATA, Tomuo YAMAGUCHI
2004 Volume 47 Issue 6 Pages
473-476
Published: June 20, 2004
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Amorphous SiCS : H : F films have been deposited by a reactive rf magnetron sputtering of Si target in Ar-CH
4 and SF
6 gas mixtures. The effects of RF power
P under the deposition on the electrical and optical properties of the films were investigated in the range of
P from 75 to 400 W. With decreasing
P below 100 W, the bonding configuration of constituent elements changes apparently; Si-C and C-H bonds increase and S- or F-related bonds could be observed. The results that the optical bandgap increases and the conductivity decreases rapidly below 100 W could be attributed to these structural changes, which involve the increase in the disorderness, owing to the complicated bonding structure.
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Koji TAMURA
2004 Volume 47 Issue 6 Pages
477-479
Published: June 20, 2004
Released on J-STAGE: October 20, 2009
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Energy spread of the laser photoionized neodymium ions was measured by retarding-potential measurements. The obtained energy spread derived from the derivative of the ion charge amount ratio as a function of the applied retarding potential corresponded to the potential of the laser photoionized region between ion extraction electrodes. Ion beams for the central ion energy of 3001400 eV were then produced, and their lateral intensity distributions were measured with a multi-channel Faraday cup. The results show that the collimated ion beams at these ion energies were obtained.
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Simulation experiments using a glow discharge apparatus
Yuji YAMAUCHI, Shingo SATOH, Yuko HIROHATA, Tomoaki HINO, Akio KOMORI, ...
2004 Volume 47 Issue 6 Pages
480-483
Published: June 20, 2004
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In order to examine the behavior of hydrogen and helium during a glow discharge in Large Helical Device (LHD), simulation experiments using a glow discharge apparatus were conducted. The hydrogen and helium glow discharges were repeated alternately to the wall of a liner installed in the discharge apparatus, and then the retained and reduced gas amounts were measured. The amount of retained helium was approximately 1/4 of retained hydrogen. It was obvious that the retention of hydrogen or helium significantly depended on the discharge sequence. The reduction of retained helium due to hydrogen discharge was very small, whereas hydrogen retention was largely reduced by the helium discharge. The amounts of retained hydrogen and helium decreased with an increase in the liner temperature, whereas the amount of impurity desorption increased with the liner temperature.
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Yuji NOBUTA, Yuji YAMAUCHI, Yuko HIROHATA, Tomoaki HINO, Akio SAGARA, ...
2004 Volume 47 Issue 6 Pages
484-487
Published: June 20, 2004
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Helium retention of 316L stainless steel used for LHD plasma facing material was evaluated after helium ion irradiation by using a technique of thermal desorption spectroscopy (TDS). After the irradiation with helium energy of a few hundreds eV, most of the retained helium desorbed in the temperature range lower than 550°C. With increase of ion energy, the ratio of helium desorbed in higher temperature range (> 550°C) increased. In the irradiation with a helium energy of 3 keV, the retained helium desorbed only in the higher temperature range. Based upon the obtained results, the desorption behavior of helium in the stainless steel sample exposed to the LHD plasma discharges was discussed.
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Masao NOMA, Katsuyasu TAMAOKA, Eiji KOMATSU
2004 Volume 47 Issue 6 Pages
488-491
Published: June 20, 2004
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We developed mass production type of c-BN thin film coating equipment. We studied cutting tool with c-BN thin film. c-BN coating cutting tool peeled off in flute position. Amorphous BN coating cutting tool didn't peel off in flute position. Friction coefficient of iron against amorphous BN thin film is 0.102. This friction coefficient is same value of c-BN thin film. We can use amorphous BN thin film coating cutting tool in cutting test of SKD61 (hard material) and SUS304. In SKD61 cutting test, amorphous BN thin film coating cutting tool life is one and a half times long as TiAlN coating cutting tool. With SUS304, amorphous BN thin film coating cutting tool life is nine times long as TiAlN coating cutting tool. Amorphous BN thin film does not adhere cutting chip of SUS304.
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