Shinku

Research and Development of Three-Dimensional

Toshio TSURUSHIMA

1985 Volume 28 Issue 1 Pages 8-18
Published: January 20, 1985
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.28.8

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Growth of ZnSe Films on GaAs, Quartz and Glass Substrates by an Ion Beam Deposition Technique

Susumu TAMURA, Katsuhiro YOKOTA, Saichi KATAYAMA

1985 Volume 28 Issue 1 Pages 19-29
Published: January 20, 1985
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.28.19

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Ga doped ZnSe films were prepared on fused quartz, 7059 glass and Cr doped (100) GaAs by means of an ion beam deposition technique. ZnSe films grown on fused quartz and 7059 glass were a polycrystal with a preferential <111> orientation. Single crystalline ZnSe grew epitaxially on (100) GaAs. The resistivities of the ZnSe films varied with the amount of Ga doped during the film growth. The ZnSe films grown on fused quartz and 7059 glass had the resistivities ranging between 2×10⁶ and 2×10¹⁰ Ω ·cm. Also, the resistivities of the ZnSe films grown on (100) GaAs were 4×10²2×10⁵ Ω ·cm.

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Growth and Oxidation of TiSi₂ Film on Si Surface

Wei Yi Yang, Tsukasa Kuroda, Shogo Nakamura

1985 Volume 28 Issue 1 Pages 30-41
Published: January 20, 1985
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.28.30

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We found that the mean grain size of TiSi₂ films on Si wafers deponds on deposited Ti amount of every time rather than annealing temperature. From SEM micrographs, it was found that no morphologies are varied before and after oxidation in air at temperature from 100°C to 800°C. But above 1000°C, the TiSi₂ film was thermally grooved at its grain boundaries and grain size was increased. From analytic electron microscope photographs, it was found that crystalline grain represent TiSi₂, but the grain boundary was found to be Ti free-zone.
Quantitative depth profile of chemical composition of the thermal oxide of the TiSi₂ have been studied by XPS in conjunction with argon ion sputtering. From chemical depth profiles of the thermal oxide of TiSi₂, we observed that SiO₂ is dominant in oxide products of the TiSi₂ at various oxidation temperatures. From FWHM and Si/Ti atomic ratio analysis, we can see that except for the TiO₂, TiO_x was detected, but no the intermediate Ti-silicide (TiSi and Ti₅Si₃) in oxidized TiSi₂. We also observed the growth of a Ti-free layer of SiO₂ at 1000°C.

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Analysis of non-Spherical Grid Geometry for Distortion-Free LEED Apparatus with Micro Channel Plate

Tatsuo OKANO, Akihiko OHSAKI, Makoto SAKURAI, Tohru HONDA, Yutaka TUZI

1985 Volume 28 Issue 1 Pages 42-46
Published: January 20, 1985
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.28.42

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A design of non-spherical grid structure for the distortion-free LEED apparatus with a micro channel plate (MCP) is described. The grid structure is assumed as an interface of two electrostatic potentials. The potential interface refracts the diffracted electrons and the LEED patterns can be projected on the MCP just like those observed on a spherical fluorescent screen. The shape of the potential interface is described by a differential equation and numerically calculated for several conditions. The most appropriate geometry is determined by the easiness of the mechanical construction. The effect of energy distribution of diffracted electrons is numerically estimated and the deviation is proved to be negligibly small for most applications.

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