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Volume 43, Issue 2
Displaying 1-10 of 10 articles from this issue
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Masayoshi ESASHI2000 Volume 43 Issue 2 Pages 91-97
Published: February 20, 2000
Released on J-STAGE: October 20, 2009
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MicroactuatorsHiroyuki FUJITA2000 Volume 43 Issue 2 Pages 98-105
Published: February 20, 2000
Released on J-STAGE: October 20, 2009
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Kazuo SATO2000 Volume 43 Issue 2 Pages 106-111
Published: February 20, 2000
Released on J-STAGE: October 20, 2009
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Yasuhiro ENDO, Ichiro HONJO, Akio ITO2000 Volume 43 Issue 2 Pages 112-118
Published: February 20, 2000
Released on J-STAGE: October 20, 2009
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Toshiyuki KAERIYAMA2000 Volume 43 Issue 2 Pages 119-125
Published: February 20, 2000
Released on J-STAGE: October 20, 2009
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Yasuhiro MIYAKE2000 Volume 43 Issue 2 Pages 126-134
Published: February 20, 2000
Released on J-STAGE: October 20, 2009
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Yukinori MISAKI, Michio MIKAWA, Katsuyoshi HAMASAKI2000 Volume 43 Issue 2 Pages 135-139
Published: February 20, 2000
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSWe report the effect of N2 partial pressure on the structure of MgO thin film deposited on Si (100) substrates by rfmagnetron sputtering using single-crystal target and sintered target in Ar+ N2 mixture. The films were evaluated using X-ray deffractmeter (XRD). We examined the change of (200) MgO reflection depending upon the change of background pressure and N2 flowrate when single-crystal target and sintered target were used. From the result, it was shown that in the case of using single-crystal target and sintered target, the crystallinity suddenly improves when background pressure reaches its threshold. However, in the case of sintered target, we found out that an increase in N2 flowrate does not affect the threshold background pressure (PTH) so much in comparison with single-crystal target. This is due to the large amount of H2O residual gas in sintered target as compared to single-crystal target.View full abstractDownload PDF (588K) -
Ayumu MORITA, Satoru KAJIWARA, Toru TANIMIZU, Masayuki TAKAHASHI, Taka ...2000 Volume 43 Issue 2 Pages 140-145
Published: February 20, 2000
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThis paper presents the development of the bending bellows named “barrel type bellows” for the multi-functional vacuum tube. Conventional bellows with a bending axis outside of the bellows is imposed the complex motions of bending and sliding, and the stress concentrates on the pleat near the end portions. Based on the numerical analysis, it is found that the concentrated stress is reduced by making the outer diameter increase continuously from the both ends toward the center. As a result, the offset width of the bellows decreases and the vacuum tube becomes small. The endurance test shows that the operating cycles are over 30, 000, which roughly corresponds to that predicted from the calculated stress and the fatigue data of the thin stainless sheet in Refs. 2) and 4).View full abstractDownload PDF (973K) -
Yoshitsugu TSUTSUMI, Hideki TOMIOKA, Yoshio OKAMOTO2000 Volume 43 Issue 2 Pages 146-150
Published: February 20, 2000
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThin film with high dielectric constant will be used for the capacitors in future 256-Mbyte and 1-Gbyte DRAMs (dynamic random access memory). The sources of these thin films are liquid phase under normal conditions. In order to deposit thin films on the complicated structure on DRAM cells, it is necessary to vaporize the sources. A new type of vaporizer, called a direct-injection vaporizer, injects these sources directly into the reactor, where they form very fine droplets that are vaporized by the radiation from a susceptor and thermal conduction from gases in the reactor. The basic performance of the vaporizer has already been studied. The current work therefore analyzes the particles and contamination of the liquid sources, which are produced by the operation of the vaporizer, in class-1 cleanroom. The numbers of particles and the level of contamination are sufficiently low to be acceptable in semiconductor manufacturing. The vaporizer uses a PET (penta ethoxy tantalum) source to deposit a thin Ta2O5 film on a 200-mm-diameter wafer. The deposited film is analyzed and found to have the same compsition as one deposited by a commercial vaporizer.View full abstractDownload PDF (2188K) -
Masatoshi KOTERA, Kiyoshi YAMAGUCHI2000 Volume 43 Issue 2 Pages 151-156
Published: February 20, 2000
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSA simulation model is developed to express the time dependent charging-up process of insulators under electron beam irradiation. The electron deposition and the energy deposition distributions produced by the incident electron beam are calculated by a Monte Carlo simulation of electron trajectories. The trajectories of slow secondary electrons and the Auger electrons are calculated considering the electric field. The electron beam induced conduction is calculated with taking into account the surface boundary of the specimen. The time-dependent spatial distributions of the charge accumulated, the electric potential built, and the backscattered secondary yield by the Gaussian-shaped electron beam irradiation are obtained. The positive and negative charging processes of a bulk PMMA by 1 keV and 5 keV electron beam irradiation, respectively are expressed.View full abstractDownload PDF (856K)
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