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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 27, Issue 10
Displaying 1-3 of 3 articles from this issue
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  • Present Status of Pressure Standards in Vacuum Region
    Masahiro HIRATA
    1984 Volume 27 Issue 10 Pages 747-758
    Published: October 20, 1984
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.27.747
    JOURNAL FREE ACCESS
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  • RF Bias Sputter-deposited Silicon-oxide Films
    Kouji EGUCHI, Hiromi SAKURAI, Hiroshi HARADA, Tadashi KASHIWAGI
    1984 Volume 27 Issue 10 Pages 759-767
    Published: October 20, 1984
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.27.759
    JOURNAL FREE ACCESS
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    Silicon oxide films have been formed by a RF bias sputter-deposition system using a quartz target in Ar or Ar/O2 sputtering gas. Substrate bias voltage Vb was varied from 0 to-200 V, at the total power of 1.9 W/cm2.
    In order to evaluate the planarization effect, the step coverage of the film on AlSi patterns was examined by SEM and compared with the computer simulated profiles using the Lehmann's method, and a good agreement was obtained. Further, we have applied this planarization technology to a 6-level metallization and realized the good step coverage.
    The properties of the silicon-oxide films were also studied. In the case of the Ar gas sputtering, the leakage current and the compressive stress in the film increase with increasing Vb. It is found that the Ar/O2 gas sputtering improves the film properties of both the inner stress and leakage current. Auger analysis indicates that the films deposited in Ar/O2 gas have O/Si ratio of about 2, but O/Si ratio of the films deposited in Ar gas is less than 2. From these data, the improvement of the properties of the films can be explained as following; oxygen in Si-O network in the films is removed by Ar ion bombardment during bias sputtering, and damaged bond is compensated by oxygen addition.
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  • Effects of Sputter-cleaning on Nb-based Josephson Junction Characteristics
    Takeshi KOBAYASHI, Yasuo SAMBE, Kazuo FUJISAWA
    1984 Volume 27 Issue 10 Pages 768-774
    Published: October 20, 1984
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.27.768
    JOURNAL FREE ACCESS
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    Effects of a sputter-cleaning of Nb base electrode on the Josephson junction characteristics have been investigated. Two types of junctions were prepared : One was with thermally oxidized Nb2O5 barrier and the other was with Si barrier. A comparison of the junction characteristics with each other revealed that dramatic degradations due to the sputter-cleaning were brought about only to the junction employing a Nb2O5 barrier, where the increased sputter-cleaning power resulted in the increased tunnel resistance by several orders of magnitude and the decreased gap parameter of Nb base electrode. An enhanced oxygen diffusion through the plasma bombarded Nb surface layer reasonably explained the observed junction degradation.
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