The Hall coefficient and thermoelectric power of p-type polycrystalline SnTe thin films for hole densities between 3× 10
19 cm
-3 and 5 × 10
21 cm
-3 which are evaporated on glass substrate are measured. The dependence of thermoelectric power on hole density shows a maximum at hole density between 3 × 10
20 cm
-3 and 5 × 10
20 cm
-3 and the ratio of high to low temperature Hall coefficient shows a maximum in the vicinity of temperature of 450 °K. These anomalous behaviors are interpreted in terms of second valence band. The separation energy of two valence bands as 0.297 eV is derived from temperature dependence of Hall coefficient, considering the ratio of actual carrier density to Hall density (
P = 1/
e ·
RH).
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