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Volume 29, Issue 3
Displaying 1-4 of 4 articles from this issue
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Naoaki MORIZUMI1986 Volume 29 Issue 3 Pages 135-145
Published: March 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (1315K) -
Atsushi KAJIMA, Shoji SHIMIZU, Koichi HIROSHIMA, Tomohiro MIYAMA, Tosh ...1986 Volume 29 Issue 3 Pages 146-151
Published: March 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSFe-B-Osystem thin films were fabricated by reactive rf sputtering from the composite targets of thin iron sheet and B2O3 tablets. The films are amber in color and have a high transmittance in the visible and the near infrared regions. Unfortunately, the exact identification of crystallographic structure of the films has not yet been succeeded. But judging from diffraction measurement, infrared absorption spectrum and SEM observation, the crystallographic structure of our samples seems to be close to polycrystalline ferric borate, FeBO3, whose c-axis is aligned perpendicular to the film plane. Saturation magnetization (4πMs=44G) is about one half of those reported for FeBO3 single crystal. Surprising-ly, our samples exhibit ferroelectricity at room temperature, despite FeBO3 by no means exhibits ferroelectricity. Saturation spontaneous polarization at room temperature (Ps=0.57μC/cm2) is more than twice that of Rochelle salt. Further we found that humidity plays an essential role for appearance of ferroelectricity. It is suggested that a hydrate formed by penetration of moisture into the films gives rise to ferroelectricity, since some zeolitic hydrates such as FeBO3·nH2O are known in ferric borates.View full abstractDownload PDF (717K) -
Hidenori FUJIWARA, Yuko HIROHATA, Mamoru MOHRI, Toshiro YAMASHINA1986 Volume 29 Issue 3 Pages 152-159
Published: March 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSPure titanium nitride films with stoichiometric composition were grown by a reactive r. f. magnetron sputtering of titanium target in a mixture of argon and nitrogen. Considerable phenomenon of hyseresis in the syntheses of the deposited films was observed depending on the nitrogen pressure. The stoichiometric TiN films could be prepared in a particular pressure region of nitrogen in the hysteresis process. Structure, micro-hardness and chemical composition of deposited films were examined by X-ray diffraction, micro-vickers hardness tester, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The stoichiometric TiN films had a color of bright-gold and were strongly oriented in (200) face with lattice parameter of 0.426 nm. The micro-vickers hardness of TiN films was approximately 2000 kgf/mm2 which was nearly same as that of the TiN bulk material.View full abstractDownload PDF (959K) -
Kenya AKAISHI, Yusuke KUBOTA, Akira URITANI, Yoichiro HORI1986 Volume 29 Issue 3 Pages 160-169
Published: March 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThe saturation and replacement of hydrogen isotopes implanted into 304 stainless steel vacuum wall at 300 K under RF discharge and RF-DC glow discharge has been studied from partial pressure measurements of desorbed isotopes. The bombarding ion flux on the wall are 12×1013 ions/cm2·s. The energy of H2+ or D2+ ion is determined by acceleration with space potential produced in discharge plasma, and is about 40 eV for RF discharge and 300 eV for RF-DC glow discharge. The hydrogen and deuterium saturation concentrations in the wall surface are 4.2×1015 and 1.3×1016 molecules/cm2 for ion bombardment of 40 eV and 300 eV, respectively. Nearly 90% of desorbed gas in isotopic exchange process is HD molecule. The desorption rate is expressed by inverse-exponential function with time. The time constant is proportional to isotope concentration and inversely proportional to bombarding ion flux.
Experimental results show that the local mixing model (LMM) is still valid for such ion implantation in lower energy region less than 1 keV. But LMM must be corrected for explanation of the isotope exchange process under plasma ion bombardment at 40 eV. Two-component inverse-exponential functions are observed in the replacement. The function of component 2 is explained by adopting an effective trapping coefficient, although another function of component 1 can be described by LMM.View full abstractDownload PDF (1246K)
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