Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 18, Issue 7
Displaying 1-3 of 3 articles from this issue
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  • Etching of Amorphous As2S3 Evaporated Films
    Akihisa MATSUDA, Sigeru IIZIMA
    1975 Volume 18 Issue 7 Pages 227-230
    Published: July 20, 1975
    Released on J-STAGE: October 14, 2009
    DOIhttps://doi.org/10.3131/jvsj.18.227
    JOURNAL FREE ACCESS
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    Characteristic pattern which was observed on the surface of etched as-evaporated As2S3 film has been investigated and ascertained to be composed of As2O3micro-crystals. Etching rate difference between as-evaporated film and argon ion laser irradiated one has been discussed. Using the difference of etching rate, holographic grating has been formed on the amorphous As2S3film.
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  • Thin Film SiO2 Deposition by RF Sputtering onto the Anodic Ta2O5 Film
    Akio SATO, Shigehiko SATO, Eiichi OKAMOTO
    1975 Volume 18 Issue 7 Pages 231-235
    Published: July 20, 1975
    Released on J-STAGE: October 14, 2009
    DOIhttps://doi.org/10.3131/jvsj.18.231
    JOURNAL FREE ACCESS
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    Here, deposition of SiO2 film by RF-sputtering onto the anodic Ta2O5 film for fabrication of an SiO2-Ta2O5 thin film capacitor is reported. Reproducible film deposition rate is achieved within the accuracy of 3% by decreasing the influence of adsorbed gases in the vacuum chamber. Argon pressure is adjusted in order to obtain the uniform deposition of the SiO2 film. The thickness distribution is less than 3% within the area covered by 70% of target radius. The standard deviation of capacitance due to the distribution of SiO2 films is about 2.5% of the average capacitance.
    The substate temperature should be precisely controlled during RF-sputtering for the realization of the capacitor with excellent electrical characteristics. The high substrate temperature causes deterioration of Ta2O5, but the SiO2 film deposited at low temperature has poor life stability and large capacitance change in moisture. The optimum substrate temperature is about 150 °C for the SiO2 film deposition onto the anodic Ta2O5 film.
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  • Evaporation behaviour and the surface oxidation of BaB6
    Shigehiko YAMAMOTO, Yukio HONDA, Katsuhisa USAMI, Hiroshi OKANO
    1975 Volume 18 Issue 7 Pages 236-239
    Published: July 20, 1975
    Released on J-STAGE: October 14, 2009
    DOIhttps://doi.org/10.3131/jvsj.18.236
    JOURNAL FREE ACCESS
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    Behaviours of the evaporation of Ba from BaB6 has been studied. A semiempirical relation was given by log P (Torr) = 3.0 (±0.1) -15, 300±1, 000/T
    in the temperature range of 1270 °K< T< 1670 °K. The evaporation of Ba was found to be emphasized when there existed an impurity layer on the surface. The thickness of the layer was estimated to be less than 100Å and was composed of Ba and O atoms.
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