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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 29, Issue 10
Displaying 1-4 of 4 articles from this issue
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  • Tritium Compatible Vacuum Systems
    Kuniaki WATANABE
    1986 Volume 29 Issue 10 Pages 461-478
    Published: October 20, 1986
    Released on J-STAGE: January 30, 2010
    DOIhttps://doi.org/10.3131/jvsj.29.10_461
    JOURNAL FREE ACCESS
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  • D·C Characteristics of GaAs layer through a Reactive lon Etching Process
    Hitoshi ITOH, Katsumi SUZUKI
    1986 Volume 29 Issue 10 Pages 479-487
    Published: October 20, 1986
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.29.10_479
    JOURNAL FREE ACCESS
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    Contamination, Oxidization and radiation damage are induced on GaAs surface by Reactive Ion Etching (RIE) using a O2-discharge of 13.56 MHz in a parallel plate reactor. This formation depends on several RIE conditions, such as r.f power (which is equivalent to cathode-accelerated voltage) and etching time. The increase in schottky junction leakage current and the decrease in the schottky barrier height are caused by the induced damage which extends to an over 0.2μm depth from the surface. The damage thus induced compensates more than 1×1016cm-3 carrier concentration in GaAs. As a result, d.c characteristics of MESFET, such as Idss, gm and Vp decrease.
    It has been confirmed that several methods, such as the protection of the GaAs surface by the SiO2 layer, wet etching of GaAs surface and thermal annealing after dry etching under low cathode accelerated voltage condition, are useful techniques for surface treatment in the fabrication of GaAs MESFET without damage influence.
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  • Effect of Bi on Structure and Magnetic Properties of MnmFe1-m Films by Evaporation Method
    Masafumi CHIBA, Norio YAMAGISHI, Yoshiharu KOIZUMI
    1986 Volume 29 Issue 10 Pages 488-494
    Published: October 20, 1986
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.29.10_488
    JOURNAL FREE ACCESS
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    We have studied the structure and magnetic properties of the films obtained by vacuum evaporation method from the evaporant (MnmFe1-m) 100-xBix. When m=0.25 and 3 ≤ x < 4 at%, the films crystallized in Mn-ferrite phase which consisted of the piller-shaped grains with a pretty ordered structure. They have shown large perpendicular-magnetic-anisotropy. The saturation magnetization and coercive force were 1.5×103 (G) and 550 (Oe), respectively. It was revealed by AES analysis that Bi played an important role in the formation of the piller-shaped grains of Mn-ferrite, which was closely correlative with perpendicular-magnetic-anisotropy.
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  • An Automatically Controlled Time-of-Flight Type Mass Spectrometer
    Kenji SUZUKI, Shinichi KOBAYASHI
    1986 Volume 29 Issue 10 Pages 495-501
    Published: October 20, 1986
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.29.10_495
    JOURNAL FREE ACCESS
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    A time-of-flight mass spectrometer controlled by a micro-computer has been proposed. The operating procedure of this instrument is based on a pulse counting technique. The instrument has following operating modes : 1) qualitative mass analysis and 2) simultaneous analysis of three kinds of ions. One of these modes can be selected from the software installed in the micro-computer. The spectrometer has been applied to dc vacuum prebreakdown measurements. It is found that carriers of the prebreakdown currents are ions of residual gases in a vacuum chamber. The usefulness of this system for analyzing ions of low intensity has been demonstrated.
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