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Kouji ISARI, Hiroaki YOSHIDA, Tatsuo GEJO, Eiichi KOBAYASHI, Kazuhiko ...
2003 Volume 46 Issue 5 Pages
377-384
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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We have developed a coaxially symmetric mirror electron energy analyzer with a high sensitivity, which was originally proposed by Kai Siegbahn in 1997. The analyzer, however, had a weak point; i.e. the performance is degraded by disturbance of the electric field near the end plates. We have improved the point by adopting compensation electrodes. Simulation with SIMION 3D version 7.0 predicts that the energy resolution (E/ΔE, FWHM) would be 300 for a pointed electron source and a solid angle of 1.2 sr. This value is about 3 times as much as the predicted value for the cylindrical mirror analyzer (CMA) used in previous EICO apparatuses. The resolution of the electron energy analyzer was obtained at UVSOR BL-2B1 by measuring an Au : 4f photoelectron spectrum of a gold film. The actual energy resolution was evaluated to be 110-130. Some improvements and applications to coincidence spectroscopy are also described.
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Takashi TOKUNAGA, Yoshio FUJII, Hiroaki TSUJIMOTO
2003 Volume 46 Issue 5 Pages
385-390
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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The low process characteristics of light intensity modulation direct overwrite (LIMDOW) magneto-optical disk with magnetically induced super resolution (MSR) function, especially front aperture detection (FAD) type were investigated. To improve low power margin in FAD-LIMDOW disks, exchange coupling between memory and writing layers should be large on copy temperature. It was confirmed that RE (Rare Earth) -rich composition was suitable for FAD readout and memory layer, and that high recording density LIMDOW disk with wide power margin was obtained.
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Realizing an Atom /Molecule Scanning Probe
Wilson Agerico DIÑO, Hideaki KASAI, Ayao OKIJI, Nelson B. ARBOL ...
2003 Volume 46 Issue 5 Pages
391-396
Published: May 20, 2003
Released on J-STAGE: January 30, 2010
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We explore the feasibility of using hydrogen to probe local surface reactivity. To do this, we compare the dissociation dynamics of H
2/Cu
3Pt (111) [121] and H
2/NiA1 (110) [110]. Calculation results show that the corresponding adsorption/sticking probability
S vs. incidence translational energy
Et profile changes with the apparent surface features. The results not only indicate that hydrogen is sensitive to the local features of the surface it is interacting with, but it is also able to distinguish among them. These discernible differences turn up as measurable/observable quantities verifiable with current experimental techniques.
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Hiroshi INO, Yoshio SAITO, Tomio KUBO, Michikazu KINSHO, Zensaburo KAB ...
2003 Volume 46 Issue 5 Pages
397-401
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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The high-intensity proton accelerator being constructed by JAERI and KEK will generates greater beam power than conventional accelerators. The radiation emission due to beam losses will therefore increase. Since vacuum O-rings installed in the accelerator will be degraded badly by the radiation, there is need to find an O-ring that has more resistant to radiation. To find an O-ring that has better radiation resistant than that of the fluororubber used for conventional accelerators in general, some O-rings which are expected to have enough resistant to the radiation were irradiated, and estimated a degradation by measurement of outgassing rate, hardness, permeation time of helium gas, and an outward observation. Most of the O-rings were irradiated in an oxygen free atmosphere and in the air. The irradiations were carried out at room temperature in Co-60 gamma irradiation facility until a dose of 1 MGy was reached. The radiation resistance of PURE-UBBER O-ring showed somewhat better than that of the fluororubber O-ring.
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Yoshio MIURA, Hideaki KASAI, Wilson Agerico DIÑO, Hiroshi NAKAN ...
2003 Volume 46 Issue 5 Pages
402-406
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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We investigate and discuss the dynamical behavior of a hydrogen atom (H) impinging on H (2 × 1) Si (001) surface, by performing quantum dynamics calculations on the
ab initio potential energy surface. We show that the wave functions along the surface parallel direction for the impinging H are localized outside of the Si dimer. This means that during the H abstraction from the Si (001), the impinging H does not behave as a hot atom due to the large geometric corrugation of H (2 × 1) Si (001) surface.
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Keiji TAMURA, Mikiya AMANO, Rie TAMURA, Susumu SHIRAKI, Hideshi ISHII, ...
2003 Volume 46 Issue 5 Pages
407-411
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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We have been carrying out a X-ray Photoelectron Diffraction (XPED) measurements by using a new input-lens-system and a high power X-ray source. In the new input-lens-system, high angle resolution and high throughput are accomplished by placing an aperture not on the image plane but on the diffraction plane of electron optics. The focal position on the diffraction plane has a linear relationship to the emission angle and is independent of kinetic energy. The angular resolution is numerically obtained as a function of the aperture size. A high angular resolution is therefore easily achieved with a small aperture. In the angle-resolving lens system, aperture sizes (φ4 mm, φ2 mm, φ0.5 mm, φ0.25 mm) correspond to the angular resolutions (± 0.6°, ± 0.3°, ± 0.08°, ± 0.04°) respectively. High angle-resolved XPED patterns from Ge (111) are obtained. Detected photoelectron intensities are high enough to measure the PED pattern even if angle resolution is 0.04°. Moreover, fine structure of the PED pattern such as the Kikuchi pattern can be measured clearly.
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Mizuho KOGA, Keisuke UEDA, Yasuaki HAYASHI, Shigehiro NISHINO
2003 Volume 46 Issue 5 Pages
412-415
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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Carbon nanotubes were synthesized by hot filament assisted direct current plasma enhanced chemical vapor deposition (HF/DC-P CVD) in CH
4/H
2 plasmas. Well-aligned and high density carbon nanotubes were grown. By I-V characteristics and SEM images, it was found that there is a close relation between well-aligned carbon nanotubes and field emission properties. It was also found by the F-N plot of I-V characteristics that the current is due to the tunnelling effect and there are no relations between the feld enhancement factor and the diameter of carbon nanotubes for the grown carbon nanotubes.
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Yuki ITOH, Seiichi NAGATA, Kazuyuki UEDA
2003 Volume 46 Issue 5 Pages
416-419
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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Silicon substrate modulated by lithographed porous silicon (Po-Si) and silicon nitride (SiN) film was observed using Scanning ESD Ion Microscope. Since adsorption energies of hydrogen and oxygen are different kinetic energies for different adsorption states, the kinetic energies of ESD ion reflect those chemical states. The chemical state analysis of H
+ and O
+ from Po-Si and SiN surfaces are performed by imaging corresponded to each composition. After heating at about 800°C, the O
+ image of Po-Si is changed accompanying with deformation of SiN film by thermal diffusion of oxygen from Po-Si.
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Satoshi KUROKOUCHI, Satsuo SHINODA, Shinsaku MORITA
2003 Volume 46 Issue 5 Pages
420-423
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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Recently, application processes of a vacuum system in which corrosive chemicals attack the copper material are rapidly spread. For use in these processes, nickel can be recognized to be a promising candidate of gasket material for ConFlat type sealing system, instead of conventional copper gasket. We produced some versions of nickel gasket, and tested these gaskets to investigate their seal properties. In course of the experiments, we found that fine scratches and nicks on faces of the nickel gaskets were hardly disappeared during the sealing face is formed, and tend to remain on the sealing face as leak paths. The last version of the test gasket of which faces were formed to prevent from any injury showed a good seal properties, particularly in baking process.
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Akitaka YOSHIGOE, Kousuke MORITANI, Yuden TERAOKA
2003 Volume 46 Issue 5 Pages
424-428
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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Real-time observation of initial stages of thermal oxidation processes on the Si (001) surface using O
2 gas (1 × 10
-4 Pa) was performed by means of the O-1s and Si-2p photoemission spectroscopy with synchrotron radiation. From the analysis of the time evolution of oxygen uptake curves on the basis of the reaction kinetics model, the oxide-layer growth depending on the surface temperature was cateogrized by the Langmuir adsorption and the auto-catalytic reaction models, respectively. It was found that the oxidation rates increased with increasing the surface temperature. The time evolution of Si oxidation states depending on the surface temperature was well monitored. We found that the surface temperature enhanced the diffusion and/or migration of adsorbed oxygen and the bulk Si atom.
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Shunsuke KAWAKI, Won-Chul MOON, Masamichi YOSHIMURA, Kazuyuki UEDA
2003 Volume 46 Issue 5 Pages
429-432
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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Cone-type carbon nanostructures (referred to as “nanotip”, hereafter) have been synthesized on a highly ordered pyrolytic graphite (HOPG) substrate by microwave plasma-enhanced chemical vapor deposition using methane (CH
4) and/or hydrogen (H
2) gas. The nanotips range from 100 to 500 nm in diameter and from 0.1 to 1 μm in height depending on growth conditions, and are grown normal to the surface. It should be noted that the nanotips grow without any catalysis and carbon source. We propose that hydrogen plasma etching plays a key role in the formation of the nanotips.
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Isao NAKAMURA, Michiko SASAKI, Ichiro TAKANO, Yoshio SAWADA
2003 Volume 46 Issue 5 Pages
433-436
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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The photocatalytic property of N doped TiO
2 films was investigated by the methylene blue reduction test under UV light irradiation. The N doped TiO
2 films were prepared as follows; first TiO
2 films were prepared on a slide glass substrate by He ion beam assisted reactive deposition method, second N
2+ ions were irradiated to TiO
2 films at an energy of 5 keV with doses ranging from 1.0 × 10
15 to 1.0 × 10
17 ions/cm
2.
The distribution of N atoms showed a Gaussian like distribution and the maximum concentration was 15% at a dose of 1.0 × 10
17 ions/cm
2.
The rate of transmittance change for blank of N doped TiO
2 film showed higher value than that of TiO
2film under UV light irradiation. The rate increased with increasing of N dose. From XPS measurement and the methylene blue reduction test, it was shown that the photocatalytic property of ion beam irradiated TiO
2films depended on ion beam acceleration energy, dose and ion species.
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Yasunori TANIMOTO, Takashi UCHIYAMA, Yoichiro HORI
2003 Volume 46 Issue 5 Pages
437-440
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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Synchrotron light source PF-AR was improved to realize higher performance in 2001. This improvement involved the renewal of the entire vacuum system to attain lower vacuum pressure for required beam lifetime. Thermal cathode ionization gauges, the most suitable gauges for the pressure measurement in the new system, were unacceptable because of both possible radiation damage to the controllers and the restriction of the budget. Cold cathode gauges (CCGs) were then chosen for the new system, while they usually have instability in the pressure range of 10
-7 Pa and lower. For the solution of this problem, we adopted the improved cold cathode gauges that hold the Penning discharge even at 10
-8 Pa and acquired calibration data with a pre-calibrated B-A gauge. We have originally designed CCG controllers using the calibration data, which enabled the reliable measurement in 10
-8 Pa range.
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Yasunori TANIMOTO, Takashi UCHIYAMA, Takashi NOGAMI, Yoichiro HORI
2003 Volume 46 Issue 5 Pages
441-444
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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Upgrading project of the synchrotron light source PF-AR was carried out in 2001, and vacuum system was entirely renewed to realize longer beam lifetime and higher stored current. Vacuum control system was unified to the EPICS, which had been already adopted in the KEKB and the injector linear-accelerator control systems. In this system, all of the vacuum devices of the PF-AR except for rough pumps can be controlled and monitored remotely on graphical operation panels. Commissioning of the upgraded PF-AR started successfully in January 2002, and the beam lifetime has been getting longer as the vacuum ducts cleaning process with synchrotron radiation has progressed. In November 2002, the lifetime of a 6.5 GeV-50 mA single-bunched beam is 900 minutes, which is 6 times as long as the value of the old PF-AR.
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Hiroki MINODA, Kunio TAKAYANAGI
2003 Volume 46 Issue 5 Pages
445-448
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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Force on water nano-contacts was studied by using AFM. A small contact between an AFM probe and water surface was made, and water nano-contact was made by drawing the AFM probe. Displacement of the AFM probe was measured as a function of time by a digital oscilloscope. In the displacement-time curves we found discontinuous changes (jumps) or plateau-like structures. The discontinuous changes appear randomly and there are no specific displacement where the discontinuous changes appears. For the step heights of jumps there is a specific step height, and the step height is distributed between 0.4-1 nm. However, the origin of the discontinuous change is not clear at the present, 1 nm step height of jump corresponds to approximately 5 nm jump in diameter of water nano-contact if we assume that the discontinuous change is explained by the discontinuous change of diameter of the bottleneck of water nano-contact. Water seems to have continuous structure in macro-scale. This study shows one example of a strange feature of water by a nano size effect.
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Kaoru YAMAGUCHI, Yuji YAMAUCHI, Yuko HIROHATA, Tomoaki HINO, Kazuhiro ...
2003 Volume 46 Issue 5 Pages
449-452
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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Deuterium retention of low activation ferritic steel, F82H, was studied by deuterium ion irradiation and followed by thermal desorption spectroscopy. When the fluence was 1 × 10
18 D/cm
2, the retained amount of deuterium for the F82H exposed to the atmosphere was 3 ×10
16 D /cm
2 which was one order of magnitude larger than that of the F82H mechanically polished. A large amount of deuterium was trapped in a thick oxide layer. The retained amount became comparable to that of the F82H mechanically polished when the fluence was 7× 10
18 D/cm
2 The retained amount of deuterium was roughly comparable to that of 316L SS and one order of magnitude smaller than that of graphite. The sputtering yield was also examined, and the obtained value was comparable to that of pure iron. These data are useful to understand the plasma surface interactions for a fusion device with plasma facing walls made by ferritic steel.
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Satoru KANEKO, Yoshitada SHIMIZU, Hiroyasu YUASA, Masahiko MITSUHASHI, ...
2003 Volume 46 Issue 5 Pages
453-456
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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The fourth harmonics of Q-switched YAG was used to deposit Bi
2Sr
2Ca
1Cu
2O
x (Bi-2212) films on MgO [100] substrates. A secondary function generator was employed to modulate Q-switch while the primary generator was synchronized with flash lamps to decrease the repetition rate of laser beam. At the rate of 2 Hz, the beam energy increased 50% per pulse and the fluctuation of power stayed in ±2% during the deposition. In order to decrease the number of particles on film, targets were irradiated by the laser before deposition. Using the fourth harmonics of slower Q-switch YAG, epitaxial growth of Bi-2212 was achieved on MgO [100] substrate with the transition temperature of 72 K. Comparing the results with those deposited using an excimer laser, higher oxygen pressure was required to obtain epitaxial growth of Bi-2212.
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Kazunori TAKAYAMA, Ichiro TAKANO, Yoshio SAWADA
2003 Volume 46 Issue 5 Pages
457-461
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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It is well known that TiO
2 film and TiN film as an optical filter have the characteristics cutting an ultraviolet ray and an infrared ray, respectively. These filters begin to be used as a window glass for cars or buildings, because a harmful ultraviolet ray for the human body or an infrared ray leading to increase of a temperature in buildings can be avoided by these filters.
In this study, three kinds of films based on TiO
2 and TiN were prepared by a reactive sputtering method. These films are a mixed film (Ti-O-N), multilayer films (TiN/TiO
2 and TiO
2/TiN) and graded films (TiN-TiO
2 and TiO
2 TiN). The optical properties about an ultraviolet ray, visible ray and infrared ray were measured by a spectroscope.
A cut off rate of the multilayer film exhibited the highest value in an ultraviolet ray and an infrared ray. However transmittance of a visible ray decreased by influence of a boundary between TiO
2 and TiN film. Therefore a visible ray transmittance of the graded film without a boundary rose in comparison with that of the multilayer film.
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Tadashi NAKAMURA, Kunio OKIMURA
2003 Volume 46 Issue 5 Pages
462-465
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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Ion density of sputtered titanium (Ti) in Inductively Coupled Plasma (ICP) enhanced dc magnetron sputtering was measured using an optical absorption method. A spectral line with a wavelength of 336.1 nm (z
4G
°9/2→a
4F
7/2) was used as the absorption line. At an Ar pressures of 3.5 Pa, the Ti ion densities at a coil rf power of 200 W were 2.0 × 10
10 cm
-3 and 2.2 × 10
10 cm
-3 for target voltages of - 400 V and - 600 V. While atom densities at the same conditions were 1.2 × 10
11 cm
-3 and 1.7 × 10
11 cm
-3, resulting in ionization fractions of 0.15 and 0.11, respectively. The results of optical emission spectroscopy suggested that the electron density increased with increasing coil rf power, while the electron temperature turned to lower value from a certain coil rf power of 80 W. We interpreted that ionization of sputtered Ti was enhanced by high-density inductively coupled plasma after the threshold coil rf power, resulting lower electron temperature due to lower ionization energy of Ti.
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Satoshi MITANI, Tokuyuki TERAJI, Toshimichi ITO
2003 Volume 46 Issue 5 Pages
466-468
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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We have investigated the crystalline quality of CVD diamond films from the viewpoint of the carrier diffusion characteristics by means of cathodoluminescence (CL) method. On one hand, free exciton related luminescences were observed from the whole area of grown CVD films even at room temperature, indicating high quality of the grown films. On the other hand, visible luminescences concluded to come mainly from substrate. The visible CL intensity was found to decrease as an exponential function of the film thickness. The damping length was estimated to be about 10 μm, corresponding to a one-dimensional diffusion length projected to the depth direction.
Furthermore, in order to investigate the effect of surface defects on the luminescence properties, defects were introduced in subsurface region by focused ion beam. A remarkable decrease in CL intensity of the visible luminescence was observed in spite of a large separation between the carrier excited area and the defect-created area. This indicates that substantial amount of excited carriers diffuse to the surface region before diffusing into the substrate region. Thus, the carrier diffusion length should be correctly considered in the evaluation of reasonably high quality diamond films using luminescence methods.
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Yoshiharu KAKEHI, Kazuo SATOH, Akihide KITABATAKE, Soichi OGAWA, Yoshi ...
2003 Volume 46 Issue 5 Pages
469-472
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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An indium-tin oxide (ITO) film surface with good surface roughness and work function was successfully achieved using an electron cyclotron resonance (ECR) plasma treatment. The mixture gases of nitrogen and oxygen were used as reactive gases. The film quality dependence on the bias voltage was investigated. The surface roughness and work function of an ITO film surface were simultaneously improved under a bias voltage of -60 V, in which the ion current was dominant. On the other hand, only work function of an ITO film surface became better at a bias voltage above 40 V, in which the electron current was dominant. This is due to the etching effect and the surface oxidation by excited species such as nitrogen ions and oxygen radicals generated in the ECR plasma.
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Yoshiharu KAKEHI, Kazuo SATOH
2003 Volume 46 Issue 5 Pages
473-477
Published: May 20, 2003
Released on J-STAGE: October 20, 2009
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A CuScO
2 thin film was successfully fabricated on an α-Al
2O
3 (1120) substrate using a pulsed laser deposition method. The effects of substrate temperature and oxygen pressure on the film quality were investigated. By adjusting these conditions, a highly c-axis oriented CuScO
2thin film was obtained. RHEED observations showed the film had twin boundaries. The optical transmission of the film was about 80% in the visible region, and the energy gap for direct allowed transition was estimated to be 3.7 eV.
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