All issues
Volume 23, Issue 12
Displaying 1-4 of 4 articles from this issue
- |<
- <
- 1
- >
- >|
-
Kiichi HOJOU, Toshiaki KIMURA, Koich KANAYA1980 Volume 23 Issue 12 Pages 547-556
Published: December 20, 1980
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSVarious applications of ion beam sputtering to the high resolution electron microscopy have heen studied. Ion beam sputter-etching has been used to reduce granularity of carbon film prepared by routine vacuum evaporation. Also, it can be used to remove comtamination layer of the organic molecules arising from the dispersion liquid (distilled water) of the imogolite crystals. The resolving power (3.3 nm) of the atomic shadowing which is obtained by the sputter deposition in similar to the routine vacuum shadowing method is obtained by the measurement of width of tungsten shadow-casting appearing at the imogolite crystals with 2 nm diameter of the lod, where shadowing angle φ is 30°.
Furthermore, the fundamental characteristics of sputter-etching for the casein and ferritin particles are examined with respect to the varying sizes and distributions, which are dependent on both accelerating potential of argon ion beam and bombardment time.
It is found that the ion beam sputter-etching is very useful to remove the surface layers contaminated over the rigid sphere protein molecules under the non-thermal working state which is experimentally confirmed from the unaltered latex inserted into the specimen and more clearly reveals intracellular structure of casein and ferritin particles.View full abstractDownload PDF (4143K) -
Toshitaka TORIKAI, Masaki OGAWA1980 Volume 23 Issue 12 Pages 557-563
Published: December 20, 1980
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe element in-depth profiles have been measured by scanning Auger electron microscopy in conjunction with the angle-lap profiling method, instead of the conventional Auger sputter profiling method. The angle-lap profiling method has advantages that the depth resolution is independent of depth below the surface and that there is no necessity for taking account of sputter broadening effect which complicates the sputter profiling analysis. It is shown that the actual interface width can be obtained by the correction taking account of several broadening factors such as Auger electron escape depth, incident electron beam diameter and surface roughness induced by angle-lapping. This profiling method has applied to the analysis of InGaAsP/InP double-hetero interface and GaAs ohmic contact reaction.View full abstractDownload PDF (1531K) -
Ikuo OKADA, Hideo YOSHIHARA1980 Volume 23 Issue 12 Pages 564-570
Published: December 20, 1980
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSIn the enhanced ARE and vacuum evaporation process, MnBi films were prepared by sequential deposition of Bi and Mn. In vacuum evaporation, MnBi cannot be formed constantly due to Mn oxidization. In the enhanced ARE process, utilization of Ar + 10% H2 mixture gas is effective in preventing Mn oxidization. The preferred crystal orientation with the c axis normal to the film plane is hardly observed in Bi films. In annealing Bi-Mn films, the preferred orientation appeared and then the MnBi growth along the Bi c axis was followed. In MnBi films, the preferred orientated crystallites with the c axis increase with ionization degree.View full abstractDownload PDF (1652K) -
Tsuneo TANAKA, Koshiro MORI, Shin-ichiro ISHIHARA, Seiichi NAGATA1980 Volume 23 Issue 12 Pages 571-576
Published: December 20, 1980
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSDoping effects of group III elements to hydrogenated amorphous silicon (a-Si : H) have been investigated using co-sputtering of poly-crystalline Si and dopant elements. Compared with gaseous doping of boron by glow discharge (GD) method, doping efficiency of Al and Ga by RF sputtering is smaller at lower doping concentrations (less than 0.5%), but at higher concentrations dark conductivity changes drastically more than 10 orders of magnitude, and high dark conductivity (10-1 ohm-1 cm-1) with low activation energy (0.02 eV) can be achieved. Optical band gap decreases with increasing doping concentration.View full abstractDownload PDF (716K)
- |<
- <
- 1
- >
- >|