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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 47, Issue 11
Displaying 1-5 of 5 articles from this issue
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  • Atmospheric Pressure Plasma in Combination with Catalyst for Gas Cleaning
    Akira MIZUNO
    2004 Volume 47 Issue 11 Pages 775-781
    Published: November 20, 2004
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.47.775
    JOURNAL FREE ACCESS
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  • Evolution towards Environmental Protection Using Nonthermal Plasma
    Toshiaki YAMAMOTO
    2004 Volume 47 Issue 11 Pages 782-788
    Published: November 20, 2004
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.47.782
    JOURNAL FREE ACCESS
    Download PDF (1000K)
  • Gas Purification Technology Using Electron Beams
    Takuji KOJIMA
    2004 Volume 47 Issue 11 Pages 789-795
    Published: November 20, 2004
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.47.789
    JOURNAL FREE ACCESS
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  • Structures and Electrical Properties of Tin Doped Indium Oxide (ITO) Films Deposited on Different Substrates by Sputtering with H2O Introduction
    Eriko NISHIMURA, Hideki OHKAWA, Yasushi SATO, Pung-Keun SONG, Yuzo SHI ...
    2004 Volume 47 Issue 11 Pages 796-801
    Published: November 20, 2004
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.47.796
    JOURNAL FREE ACCESS
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    ITO films were deposited on three different substrates, Si, non-alkaline glass, and SiOxcoated glass, by dc magnetron sputtering with/without H2O introduction. H2O partial pressure during the deposition was controlled to be 6.7 × 10-3 Pa. The structural and electrical properties of the films were analyzed in detail. The ITO films deposited with the H2O introduction showed amorphous structure and higher crystallization temperature during post-annealing in N2. Such effects of the H2O introduction on the microstructure of the films were different for each substrate. The ITO films deposited on the Si substrate showed the lighter effects, whereas the films on SiOx coated glass showed the much heavier effects. In both cases, the effects were stronger for the thinner film thicknesses, implying that the interface between ITO films and the substrate should be strongly affected by the H2O introduction. The amorphous ITO films deposited under the higher H2O partial pressure contained less microcrystalline residues after wet-etching. Such films were analyzed by secondary ion mass spectroscopy (SIMS) to have much higher hydrogen concentrations inside the films.
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  • Development of High Power Soft X-ray Source-AlN/Cu Target
    Takaomi MATSUTANI, Masato KIUCHI, Kiyotaka SHIROUZU, [in Japanese], Ry ...
    2004 Volume 47 Issue 11 Pages 802-805
    Published: November 20, 2004
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.47.802
    JOURNAL FREE ACCESS
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    An AlN target for Al-Kα x-ray source with high power and long service life has been developed by means of N2+ ions assisted Al vapor deposition method. Ambient temperature formations of AlN on a Cu cold-anode were carried out at Al deposition rate varied from 2.0 nm/s to 0.15 nm/s with fixed low-energy N2+ ion of 1 keV. The AlN films were characterized by an x-ray diffraction, an x-ray fluorescence and a Knoop-hardness measurement. The AlN deposited at Al deposition rate of 0.5 nm has N/Al ratio of 0.45, Knoop-hardness of 1500 and low electric resistance of 0.2 Ω. Comparison of durability test with the AlN target and a conventional Al target was performed by bombarding the targets with 40 keV electrons. It was found that a maximum electron input power of the test increased five times higher than that of Al/Cu target in conventional using model.
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