Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 26, Issue 4
Displaying 1-6 of 6 articles from this issue
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  • Chemical Conversion of Surface and Film Formation Techniques Used Together with Vacuum Deposition and Ion Implantation
    Mamoru SATOU, Fuminori FUJIMOTO
    1983 Volume 26 Issue 4 Pages 287-293
    Published: April 20, 1983
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.26.287
    JOURNAL FREE ACCESS
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  • Thermal Etching of Silicon by Residual H2O in the Vacuum System
    Masashi USAMI, Takashi MEGURO, Mikito NAKABAYASHI, Tadatsugu ITOH
    1983 Volume 26 Issue 4 Pages 294-299
    Published: April 20, 1983
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.26.294
    JOURNAL FREE ACCESS
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    Thermal etch pits formed on (100) and (111) silicon surfaces heated in the temperature ranges 750°850°C in the vacuum chamber evacuated by the degraded ion pump system have been studied. The surface morphology was observed by scanning electron microscopy (SEM) and the residual gas analysis was performed by quadrupole mass spectroscopy (QMS). The etch patterns were triangular on the (111) and rectangular on the (100) surface. The pits appear to be due to the preferential etching of {111} plane. From the experimental results by QMS analysis, it is considered that the etching reaction is caused by residual H2O in the vacuum chamber.
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  • Comparison of Glow Discharge Cleaning with Taylor-type Discharge Cleaning on JFT-2
    Kenji YOKOKURA, Yoshimi MATSUZAKI, Takashi TANI, Kazuo KIKUCHI, Minoru ...
    1983 Volume 26 Issue 4 Pages 300-311
    Published: April 20, 1983
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.26.300
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    Method of glow discharge cleaning (GDC) was applied to JFT-2 tokamak and the cleaning effect of GDC was compared with that of taylor-type discharge cleaning (TDC) on the same machine. Results show clearly their individual characteristics to remove light impurities.
    Their abilities of surface cleaning were compared each other by observing cleanliness of sample surfaces with a AES and by measuring decay times of produced gas pressures during discharge cleanings with a mass-analyser. It was shown that TDC method is better by several times than GDC method from a mass-analyser measurement. Moreover discharge cleaning time necessary to reduce light impurities in the normal plasma to a certain level was compared by monitoring time evolution of radiation loss power with a bolometer, and the time by TDC was only one fifth of that by GDC. The advantage of TDC may come from the excellently high hydrogen flux which interacts with the limiter and the wall.
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  • Sputtering and Secondary Ion Yield of Metals Subjected to Oxygen Ion Bombardment
    Kazuyuki INOUE, Yasunori TAGA, Kozo SATTA
    1983 Volume 26 Issue 4 Pages 312-318
    Published: April 20, 1983
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.26.312
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    The yield of sputtering and secondary ion emission of metals under oxygen ion bombardment were simulta-neously measured for multilayer targets with a known layer thickness. The sputtering yield of each layered metal was determined by the time to sputter away the thin film.
    The experimental results revealed that the sputtering yields of metals were primarily explained by Sigmund's theory and a linear relationship was found between the ionization potential and modified degree of ionization which can be expressed by the ionization potential and the secondary O2+current.
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  • Preparation of a-Si:F:H Thin Films by a Glow Discharge Method and the SiF4 Plasma Analyses
    Nobuki MUTSUKURA, Mikio OUCHI, Shin SATO, Yoshio MACHI
    1983 Volume 26 Issue 4 Pages 319-325
    Published: April 20, 1983
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.26.319
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    Flourinated amorphous silicon (a-Si:F:H) films have been prepared from a SiF4 gas diluted with H2 gas through a RF glow discharge method, and the optical property such as infrared (IR) transmission characteristics of a-Si:F:H films depending upon a total gas pressure, have been measured. At the IR transmission spectra of the films deposited at relative high gas pressure, an absorption of Si-O bond at 1100-1200 cm-1 remarkable. On the other hand, for a-Si:F:H films deposited at lower pressure, a Si-Hn wagging mode at about 630 cm-1 was observed prominently. In each films an absorption associated with a Si-Fn bond was very weak.
    The measurements of a plasma parameter such as a mean electron energy using a double probe method and of the optical emission spectroscopy for observing the chemical reactions in a plasma, have also performed. The contribution of H radicals and the possible reactions responsible for the deposition in gas phase and/or the substrate surface has been discussed more.
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  • Recording Characteristics of Si-MOS Target for Electron-Beam Memory
    Hideki ANDOH, Toshiaki SUHARA, Hiroshi NISHIHRA, Jiro KOYAMA
    1983 Volume 26 Issue 4 Pages 326-329
    Published: April 20, 1983
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.26.326
    JOURNAL FREE ACCESS
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