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Volume 29, Issue 7
Displaying 1-5 of 5 articles from this issue
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Takio TOMIMASU1986 Volume 29 Issue 7 Pages 299-308
Published: July 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (1296K) -
Takashi NOMURA, Masahiro MIYAO, Minoru HAGINO1986 Volume 29 Issue 7 Pages 309-314
Published: July 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSA new molecular beam source, multiholed plug effusion cell which has uniform beam intensity on a substrate, is described. The effusion cell consists of a crucible and a plug with eight holes which act as collimating effusion sources. The eight collimated beams make uniform beam intensity on the substrate. A method to calculate the beam intensity distribution of the multiholed plug effusion cell is described. The thickness distribution of the antimony film deposited by the multiholed plug effusion cell is in good agreement with the calculated one. The correction of the hole parameters at oblique beam incidence is also described.View full abstractDownload PDF (659K) -
Takeshi KAWAGUCHI, Michinari SASSA1986 Volume 29 Issue 7 Pages 315-322
Published: July 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSFilms were prepared by evaporating Ge30S70 glass fragment in a vacuum at various deposition rates (1.7-400 Å/sec) using a chimney type crucible. The composition in the films was found to be 35±1 at% for Ge and 65±1 at% for S even if the deposition rate is varied. The influence of the deposition rate on the structure of Ge35S65 film were studied by ESR, X-ray diffraction and optical transmission measurements. The Ge35S65 film contains homopolar bonds of Ge-Ge and S-S in addition to Ge-S heteropolar bond. The randomness of the network structure of the film increases with increasing the deposition rate. This study suggests that the deposition rate has different effect on the local structure, the optical absorption properties and the medium range structure of the film, respectively. The structural changes in the Ge35S65 film resulting from illumination at room temperature and heat-treatment were also studied. The illumination changes the short range and medium range structures of the film and the band tail disorder decreases. On the other hand, the illumination increases the local disorder around Ge-Ge bond in the film. The heat-treatment decreases the all structural disorders of the film.View full abstractDownload PDF (1033K) -
Noboru SHIBATA, Kuniya FUKUDA1986 Volume 29 Issue 7 Pages 323-327
Published: July 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSAmorphous silicon nitride antireflective (a-SiN-AR) coating film was formed at the top region of p-n silicon solar cells by P-CVD. The refractive index of a-SiN films was controlled easily by changing operation parameters of P-CVD so that the theoretically matched AR coating film could be formed.
Silicon solar cells with AR coating formed by this technique showed a 46% improvement in practical conversion-efficiency and a 43% improvement in short circuit current in comparison with uncoated cells.View full abstractDownload PDF (462K) -
Hiroshi MORIKAWA, Fumio IWATSU, Terumi TERAO1986 Volume 29 Issue 7 Pages 328-333
Published: July 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThe temperature of a loop with a tip mounted in an FIM has been measured by a four terminal method under the influence of gas molecules. The temperature distribution in the tip and the loop has been calculated by taking into account Joule's heat, the thermal conductance through the tip and the loop, the heat radiation from these surfaces and the heat taken away by the impinging gas molecules. The gas effect is appreciable at pressures higher than 10-2 Pa of He, Ne and H2. By making a tip with Ni, Au or Al, the loop temperature at an instance the tip melts has been measured. The calculated temperature agrees pretty well with the respective melting point.View full abstractDownload PDF (695K)
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