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Volume 22, Issue 7
Displaying 1-3 of 3 articles from this issue
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Mamoru MIZUHASHI1979 Volume 22 Issue 7 Pages 253-266
Published: July 20, 1979
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe present state of the art of transparent, electrically conducting stannic oxide and indium oxide films is reviewed from the points of production technique, optical and electrical properties, and their applications in industry. Emphasis is on the relationship between the production method and the properties of films. In particular, the difference in the optimised doping level for each production method is explicitly described.
Some new evidences are presented to discuss the so-called “alkali effect” observed for the SnO2/glass case, which leads to a conclusion that the effect does not always prevail. Some useful knowledge on several kinds of glasses is also presented.View full abstractDownload PDF (1523K) -
Toshinori TAKAGI, Kiyoshi INOUE, Shigeo MIZUGAKI, Akio SASAKI, Isao YA ...1979 Volume 22 Issue 7 Pages 267-272
Published: July 20, 1979
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThin films of III-V compound semiconductors, InSb and GaAs, are prepared using the ionized-cluster beam deposition. Thin films of InSb are deposited on (0001) sapphire by using a single ion gun. Substrate temperature is varied from 350-450°C, and an ion accelerating voltage from 0 to 6 kV. The improvement in crystalline quality with the ion accelerating voltage is observed through X-ray rocking curves. The best crystalline quality is obtained in the experiment with the deposition condition of 400°C (substrate temperature) and 4 kV (ion accelerating voltage). The film prepared with this condition shows the (111) -oriented twin crystalline. Thin films of GaAs cannot be prepared with a single ion gun, since the difference in the vapor pressure of Ga and As is so great that simultaneous deposition of Ga and As cannot be expected. Thin films of GaAs can be prepared on (0001) sapphire and on (001) Cr-doped GaAs by using two ion guns, each for Ga and As, in which the crucible temperatures are chosen to obtain the vapor pressure of As being 20 times to that of Ga. Substrate temperature is varied from room temperature to 700°C, and an ion accelerating voltage is varied from 0 to 6 kV. Again, the improvement in crystalline quality with the accelerating voltage is observed through high energy electron diffraction and photoluminescence.View full abstractDownload PDF (851K) -
Okikazu HIRABARU, Tadao NAKASHIMA, Hirofusa SHIRAI1979 Volume 22 Issue 7 Pages 273-278
Published: July 20, 1979
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe structure of vacuum deposited copper phtalocyanine (Cu-Pc) films on glass substrate was examined in relation to those deposited on (100) KCl substrate, by varying substrate temperature (Ts), deposition rate, etc.
The crystal structure observed was of α-form with thread-like mosaic structure for Ts≤170°C, irrespective of other deposition parameters. Occurrence of β-form took place for Ts_??_ 170°C. Cu-Pc film of α-form grows such that the molecular plane (001) of Cu-Pc is parallel to the substrate resulting in a columnar mosaic structure similar to that observed for KCl substrate.
Films of α-form sublimed before showing any change when heated in vacuum. On the other hand, the threadlike mosaic structure, when treated in air at temperatures higher than 190°C, grew in size, and the texture was divided into domains of the order of a few microns, within which the mosaic structure has a common director.View full abstractDownload PDF (2065K)
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