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Volume 32, Issue 7
Displaying 1-5 of 5 articles from this issue
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Jun NOGAMI1989 Volume 32 Issue 7 Pages 593-599
Published: July 20, 1989
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThis article reviews research concerning metals on silicon surfaces with the scanning tunneling microscope (STM), primarily to indicate the scope of recent STM work to those who are already familiar with the study of these systems by other techniques. A discussion of the applicability of STM to various aspects of the behavior of metals on Si is followed by a brief compilation of published work.View full abstractDownload PDF (1570K) -
Ryuso AIHARA, Mutsunori OBATA, Hiroshi SAWARAGI1989 Volume 32 Issue 7 Pages 600-607
Published: July 20, 1989
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSGenerally, double-stage demagnified electorostatic lenses are used for a focused ion beam instrument.
The instrument needs at least three high voltage output terminals (accelerator, condenser lens and objective lens). With the increase of the accelerating energy, these lenses need higher forcusing potentials.
The simplest method to supply thsese three potentials from one high voltage generator is to use a bleeder resistor consisting of many high megohm resistors, but large voltage change is induced on thsese terminals when unstable microdischarge is caused across the lens electrodes. As a result, the beam shift and defocus of the ion beam are caused.
By solving these problems, a, new high voltage generator which directly supplies three potentials from a CockcroftWalton high voltage multiplier circuit has been developed.
The internal resistance from each terminal is 3 orders smaller than the conventional method (bleeder registor); therefore, there is no deterioration of the focusing property even if micro-discharges of a few microampares occur across the lens electrodes.View full abstractDownload PDF (1000K) -
Sumio HOSAKA, Shigeyuki HOSOKI, Tsuyoshi HASEGAWA, Keiji TAKATA1989 Volume 32 Issue 7 Pages 608-615
Published: July 20, 1989
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSA scanning tunneling microscope (STM) was developed to evaluate advanced device process which needs atomic or nm order control. The STM has an atomic resolution topographic imaging mode, a fast probe scanning and imaging mode, and a material characterization imaging mode. The features of the instrument are : (1) A conversion technology of tunneling current fluctuation to gap fluctuation for a high resolution STM image, (2) a correction technology of probe control error in fast scanning for an in-situ observation and (3) an AD-DA conversion technology to hold the probe position fixed for a Current Imaging Tunneling Spectroscopy (CITS). Various STM images support that the STM provides a high resolution (around 2 Å in X and Y, and less than 0.1 Å in Z), a fast imaging of 2 s/flame (150 Å × 150 Å) and simultaneous measurement of both STM image and current image. (7×7) reconstruction Si (111) surface VTR images, (√3 × √3) Au construction on Si (111), pn junction structure and the boundary, and groove shape and recorded pit structure in optical disc device are presented and discussed here. The STM is found to be feasible to evaluate an Molecular Beam Epitaxy (MBE) process, a fine pn junction and an ultra high packed structure.View full abstractDownload PDF (1654K) -
Ikuji ISHIKAWA1989 Volume 32 Issue 7 Pages 616-619
Published: July 20, 1989
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (695K) -
Masanori KOBAYASHI, Yoshio SAITO1989 Volume 32 Issue 7 Pages 620-626
Published: July 20, 1989
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (1488K)
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