Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 39, Issue 2
Displaying 1-4 of 4 articles from this issue
  • Yukio INOKUTI, Kazuhiro SUZUKI, Yasuhiro KOBAYASHI, Osamu OHKUBO, Nast ...
    1996 Volume 39 Issue 2 Pages 51-56
    Published: February 20, 1996
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    In order to clarify the influence of the focusing coil configuration on the deposition rate and distribution on the substrate, various configurations were tested in the horizontal high-current HCD apparatus for TiN coating.
    Both high deposition rates from 4.0 to 6.0μm/min and high plasma density were realized by setting the focusing coils around the crucible, in the path of the evaporant, and behind the substrate. Thickness distribution on the substrate was affected by the configuration of the coils behind the substrate and a good uniformity was realized with multiple coils. The TiN films obtained showed a fine, smooth surface with gold color and strong (111) orientation.
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  • Mutsuo YAMASHITA, Jhoji KAGAMI
    1996 Volume 39 Issue 2 Pages 57-64
    Published: February 20, 1996
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    A coil-target-type high-frequency sputter apparatus for ion-based thin-film formation techniques, such as ion plating and ion beam deposition, was constructed. A plasma-exciting high-frequency coil made of sputter source material (Cu) was located in the metallic sputter chamber and high-frequency power of 13.56 MHz and DC voltage between 200 V and 1 kV were applied to this coil simultaneously. When a parallel magnetic field of 150 G was superimposed on the plasma region, this coil was positively sputtered by high-rate inverse magnetron sputtering. At a high pressure around 9Pa, a large majority of the extracted ion beam was comprized of Cu+ ions and Ar+ ions accounted for less than 2%. When a suitable perpendicular magnetic field between 10G and 40G was superimposed, both the sputter rate and the ionization ratio of the sputtered source material increased markedly, especially in the gas pressure below 6.5×10-1 Pa.
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  • Satoru IWAMORI, Takehiro MIYASHITA, Shin FUKUDA, Nobuhiro FUKUDA, Kazu ...
    1996 Volume 39 Issue 2 Pages 65-70
    Published: February 20, 1996
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    The adhesive strength between Cu thin films and polyimide (pyromellitic dianhydride-oxydianiline) substrates is known to be reduced after heat treatment at 150°C in air. In order to investigatethe interface between the Cu thin film and polyimide substrate, optical microscopic observations, electron microscopic observations, AES analysis, FT-IR analysis, and XPS analysis were performed. The weak boundary layer (WBL) is found to move toward the Cu interface as the heat treatment proceeds. Observation of the peeled surfaces after heat treatment shows that Cu or Cu2O particles are present on the polyimide surface. The relationship between the adhesive strength and the chemical bonding states is also discussed.
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  • Plasma Assisted Deposition
    Shoji YOSHIOKA, Shigeaki NAKAMURA, Nobuo SAITO, Akira TUJIMURA, Isamu ...
    1996 Volume 39 Issue 2 Pages 71-74
    Published: February 20, 1996
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Download PDF (416K)
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