A coil-target-type high-frequency sputter apparatus for ion-based thin-film formation techniques, such as ion plating and ion beam deposition, was constructed. A plasma-exciting high-frequency coil made of sputter source material (Cu) was located in the metallic sputter chamber and high-frequency power of 13.56 MHz and DC voltage between 200 V and 1 kV were applied to this coil simultaneously. When a parallel magnetic field of 150 G was superimposed on the plasma region, this coil was positively sputtered by high-rate inverse magnetron sputtering. At a high pressure around 9Pa, a large majority of the extracted ion beam was comprized of Cu
+ ions and Ar
+ ions accounted for less than 2%. When a suitable perpendicular magnetic field between 10G and 40G was superimposed, both the sputter rate and the ionization ratio of the sputtered source material increased markedly, especially in the gas pressure below 6.5×10
-1 Pa.
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