All issues
Volume 29, Issue 4
Displaying 1-6 of 6 articles from this issue
- |<
- <
- 1
- >
- >|
-
Masahiro YAMAMOTO, Hiroo NAKAMURA, Masatsugu SHIMIZU, Norio OGIWARA, T ...1986 Volume 29 Issue 4 Pages 187-193
Published: April 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (1493K) -
Kazunori KOMORITA, Kazuhisa IDE1986 Volume 29 Issue 4 Pages 194-200
Published: April 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSFor the research on trap of the Bi2O3 thin films, the thermally stimulated current (TSC) has been measured at the temperature region from 100 to 380 K. The TSC curve shaped two peaks (A and B) which were separated by the method of thermal creaning to several peaks.
The trap levels of these peaks were calculated by three appreciations such as the initial rise method, the graphical analysis and Chen method as follows : A peak, 0.033-0.043 eV and B peak, 0.15-0.42 eV respectively. Judging from the electric behaviors of the TSC, it was concluded that A peak is related to the host Bi2O3 thin films and B peak to the space charge in the thin films near the interface of films and electrode.View full abstractDownload PDF (832K) -
Yuichi IKETSU, Nobuyoshi KOSHIDA1986 Volume 29 Issue 4 Pages 201-205
Published: April 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSIon-beam modification of thin amorphous films of molybdenum trioxide (a-MoO3) was studied using thermionic sodium ions with an accelerating voltage of 4-12 kV. The films become abruptly insoluble in alkaline solutions at ion doses beyond a threshold value Dth. The a-MoO3 film is potentially useful as a negative-type inorganic ion resist with extremely high contrast. From the analysis of the voltage dependence of Dth, it is suggested that the resistive property is a result of the insulator-metal transition of sodium molybdenum bronze (NaxMoO3) produced by ion implantation. This hypothesis is also supported by a significant decrease in the sheet resistance of the film with increasing ion dose.View full abstractDownload PDF (599K) -
Masatoshi OHKOSHI, Mitsuaki HARADA, Shigeki OHBAYASHI, Shigeo HONDA, T ...1986 Volume 29 Issue 4 Pages 206-211
Published: April 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDependence of magnetic properties on sputtering conditions is studied in amorphous TbCo films. Perpendicular magnetic anisotropy constant Ku depends strongly on Ar pressure and negative substrate bias voltage VB. When deposited at 10 mTorr Ar pressure without VB or with applying VB of-100 V, the film has positive Ku of 106 erg/cm3 and the hysteresis loop measured perpendicular to the film plane is quite rectangular. Changes in film composition, film structure, and internal stress are investigated also for Ar pressure and substrate bias. The large perpendicular magnetic anisotropy is associated with an ordered fiber structure which comes from moderate bombardment of energetic species.View full abstractDownload PDF (1092K) -
Joshin URAMOTO1986 Volume 29 Issue 4 Pages 212-219
Published: April 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSIn order to apply a sheet plasma type of volume produced H-, D- ion source to injection of proton accelerators and neutral beam injection of thermo-nuclear fusion researches, a large sheet plasma of width 2025 cm and length 30 cm is produced in the discharge current of 175 A, H2 or D2 gas pressure of about 2.5×10-3 Torr and gas flow of (2.02.5) Torr l/sec in magnetic field of (60110) gauss.
Thus, H- or D- ion currents are extracted in current densities up to 19 mA/cm2 or 16 mA respectively, which are uniform within 10% over the large area (above 250 cm2) of the sheet plasma surface, and for the acceleration voltage up to 4.5 kV.
Electron current accelerated with H- or D- ions becomes neglisible beyond a distance of 2cm from the final acceleration electrode.View full abstractDownload PDF (793K) -
Wei Yi YANG, Shogo NAKAMURA, Tsukasa KURODA1986 Volume 29 Issue 4 Pages 220-224
Published: April 20, 1986
Released on J-STAGE: January 30, 2010
JOURNAL FREE ACCESSHigh temperature reaction between Ti and SiO2 at interface in Ti/SiO2/TiSi2/Si system is studied using X-ray photoelectron spectroscopy (XPS) in conjuction with argon-ion sputtering. Below 750°C, the TixSiy (x/y=1.0-1.2) is formed, and the thickness of SiO2 layer is thin. Above 750°C, the TiSi2 is formed, and relative atomic concentration of Si in SiO2 (Si-ox) is sharply decreased. To compare the experimental results of Ti/SiO2/TiSi2/Si system with that of Ti/ SiO2/Si system, one found that the formation of additional TiSi2 film will mainly be controlled by the substrate silicon atoms which diffuse to the surface layer through the grain boundary in the layer of TiSi2 and SiO2.View full abstractDownload PDF (735K)
- |<
- <
- 1
- >
- >|