Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 19, Issue 2
Displaying 1-4 of 4 articles from this issue
  • Mamoru MIZUHASHI
    1976 Volume 19 Issue 2 Pages 39-45
    Published: February 20, 1976
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
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  • Toshiki KADOTA, Toa HAYASAKA, Hideo YOSHIHARA
    1976 Volume 19 Issue 2 Pages 46-54
    Published: February 20, 1976
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    As for diamond heat sinks, the properties of Au eutectic alloys used for bonding a semiconductor chip to a diamond are investigated, and then, film-soldering method is studied in which a semiconductor chip is soldered to a metallized diamond substrate evenly under small load with low melting alloyed film.
    As soldering materials, Au-Sb, Au-Sn and Au-In alloys are selected and their properties, viz. thermal conductivity, electric resistance, hardness and tensile strength, are investigated. In all alloys, their eutectic alloys have similar properties, and in Au-Sb alloy, which has no alloy phase in hypo-eutectic region, it can improve its properties when its composition becomes Au-rich from the eutectic composition.
    In soldering experiments, Au-Sb alloy is mainly used and GaAs chips and Pyrex glass, as model specimens, are soldered in an atmosphere of H2 gas. The effects of temperature, time, load, film thickness, film structure, and film composition on the soldering strength are investigated, resulting that the conditions for assuring the appropriate soldering are defined. From the XMA analysis of alloyed film's composition, together with above results, it is found that the rate of soldering reaction is controlled by the interdiffusion of Sb into Au solid phase.
    In comparison with above results, similar investigation is carried out using Au-Sn alloy.
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  • Kap-soon CHANG, Tatsuo IWATA
    1976 Volume 19 Issue 2 Pages 55-61
    Published: February 20, 1976
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    The influence of electric field on the build-up process of tungsten field emitter was studied to explain the unexpected value of field correction energy ΔQF.
    Some results as follows were found : (i) In case of relatively small tip radius r below 3000A ΔQF increases with the field F at same tip radius, while at larger radius above 3500A the available range of F for the measurement becomes narrower and then ΔQF nearly constant. (ii) At same F/F0, ΔQF increased with the tip radius, where F0 is the minimum filed to produce build-up and is inversely proportional to √r. It, therefore, must be noted that the apparent value of ΔQF may vary with F as well as F/F0 considerably. (iii) Two build-up stages were observed in the build-up procedure. The initial build-up in the neighborhood of the {320} and {341} areas exhibits larger activation energy, and different field dependency from those of the complete build-up.
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  • Michio NAGASAKA
    1976 Volume 19 Issue 2 Pages 62-64
    Published: February 20, 1976
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Download PDF (293K)
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