Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 50, Issue 7
Displaying 1-6 of 6 articles from this issue
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Special Issue: Accelerator Mass Spectrometry
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Regular Paper
Article
  • Correlation between the Crystallinity Controlled by rf Substrate Bias and Sidewall Morphology on Dry-etched ZnO Films
    Takahiro HIRAMATSU, Mamoru FURUTA, Hiroshi FURUTA, Tokiyoshi MATSUDA, ...
    2007 Volume 50 Issue 7 Pages 498-501
    Published: 2007
    Released on J-STAGE: January 01, 2008
    DOIhttps://doi.org/10.3131/jvsj.50.498
    JOURNAL FREE ACCESS
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      The microstructure and dry etching properties of ZnO films deposited by rf magnetron sputtering have been investigated. It was found that preferred orientation of ZnO films could be controlled from (002) to (101) and (100) mixed phase applying the substrate bias power. Dry etching of the ZnO films was conducted by a helical coil reactor. The etching rate of the films was strongly depended on the power applying the helical coil. Optical emission microscopy measurement showed that the etching rate of the ZnO film was rapidly increased when the emission intensity ratio of excited atomic hydrogen (Hα) to CH increased in the plasma. Excited atomic hydrogen served as etching gas to react with the carbon layer on ZnO film surface. The etching shape of ZnO sidewall was affected by the crystal structures of the films. The rough sidewall morphology of dry-etched (002)-oriented ZnO films was due to the columnar grains, comparing to the smooth sidewall obtained from the film with (101) and (100) mixed structure.
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