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Volume 27, Issue 7
Displaying 1-6 of 6 articles from this issue
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Koichi MATSUSHITA, Yasushi SATO, Takashi HARIU, Yukio SHIBATA1984 Volume 27 Issue 7 Pages 569-580
Published: July 20, 1984
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSPlasma-assisted epitaxy (PAE) has been applied to grow GaAs and GaSb layers at low substrate temperatures with relatively high growth rate. PAE GaSb layers deposited in hydrogen plasma were found to show much better results than those in argon plasma as indicated by lower carrier concentration, higher Hall mobility and clear edge emission in photoluminescence. Hole concentration and Hall mobility of a non-doped GaSb layer deposited in hydrogen plasma at a substrate temperature of 390°C on GaAs (100) substrate are 6×1016 cm-3 and 620 cm2/V·sec, respectively, which are comparable to those obtained by other methods like MBE, MOCVD, etc., in spite of a lower substrate temperature in PAE. This technology is also considered to be useful in growing highly n+ and p+ GaAs layers for their application to non-alloyed ohmic contacts employed in almost all kinds of GaAs devices or the top layers of p-n junction type GaAs solar cells.View full abstractDownload PDF (1387K) -
Akihiko YOSHIKAWA, Tomotaka MATSUMOTO1984 Volume 27 Issue 7 Pages 581-588
Published: July 20, 1984
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSA new type of DC magnetron-discharge CVD apparatus with facing-cathodes structure has been developed. The radiation damage by high-energy chaged particles, which is often encountered in a plasma process, can be reduced using the new plasma CVD. Discharge characteristics of the apparatus have been examined and hydrogenated amorphous silicon films have been deposited using the new apparatus. It is shown that, when the deposition rate is less than 50Å/min, the photo-conductivity of a-Si films can be about 3 times as large as that of films prepared by a conventional plasma CVD, probably due to the effect of reduced radiation damage.View full abstractDownload PDF (1204K) -
Kiichi HOJOU1984 Volume 27 Issue 7 Pages 589-595
Published: July 20, 1984
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe thickness of amorphous boron films prepared by ion beam sputter deposition is measured using trasmission electron microscopy (TEM). The point of this method is to hold the preparated films at both side with the deposited metal layers of Pt-Pd by vacuum evaporation or W by ion beam sputtering. Especially, metal layer at outside is effective to except the influence of contamination to be polymerzed in TEM.
Based on the ion beam sputter deposition theory, the density of boron films is calculated. As a result, the film density is found to be independent of thickness. The density of amorphous boron films made by ion beam sputter deposition (ρ=2.4±0.18 g/cm3) is in close agreement with the result obtained by N. N. Greenwood (ρ =2.35 g/cm3).View full abstractDownload PDF (1634K) -
Nobuyoshi KOSHIDA, Osamu TOMITA1984 Volume 27 Issue 7 Pages 596-599
Published: July 20, 1984
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSIon irradiation effect on amorphous WO3 (a-WO3) films was studied using thermionic Na+ ions with accelerating voltages V=412 kV. These films become insoluble in alkaline solution at values of ion dose beyond a threshold Dth. Exposure characteristics show that the contrast is considerably higher than that of conventional organic polymer electron-beam resists. The threshold dose, which was almost independent of the film thickness, increased gradually with increasing accelerating voltage of ions (Dth∝V2/3). These results were compared with exposure characteristics for electron irradiation reported in the literature. A-WO3 films are potentially useful as inorganic ion-beam resists.View full abstractDownload PDF (418K) -
Joshin URAMOTO1984 Volume 27 Issue 7 Pages 600-609
Published: July 20, 1984
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSH- ions with a current density of about 30 mA/cm2 (2.1 mA in 3 mmφ) or D- ions with about 8 mA/cm2 (0.56 mA in 3 mmφ) near an energy of 2.5 keV, is extracted from outside of a sheet plasma around a low pressure 7.7×10-4 Torr and a weak magnetic field 100 gauss. The sheet plasma (14 cm width and 0.8 cm thickness) produces a large uniform diffusion flux of plasma over a large area across the magnetic field, and includes electron beam components (50 eV) in it's center while the electron temperature outside of the sheet plasma is ranging from 2 eV to 3 eV. An effective extraction method in which only H- or D- ions are focussed and electrons are deviated, is found while the electron current is suppressed below 1/5 compared with the H- or D- ion current.View full abstractDownload PDF (1163K) -
Joshin URAMOTO1984 Volume 27 Issue 7 Pages 610-616
Published: July 20, 1984
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSA development to large area H- or D- ion source is tried by using three extraction electrodes : The first electrode bias voltage is set near the wall potential (floating), the second electrode is set near 13 % of main extraction voltage and the third electrode is the main acceleration electrode. An ion current of 13 mA (3.3 mA/cm2) for H- or 11 mA (2.8 mA/cm2) for D- at 3 keV is extracted from 9 apertures of 6 mmφ in 4 cm2 outside of the sheet plasma (14 cm wide and 1.0 cm thick) under a pressure of 7.7×10-4 Torr H2 or D2 gas and a week magnetic field 50 gauss. Then, it is noted that the corresponding electron current is suppressed below 1/10 of the H- or D- ion current.View full abstractDownload PDF (724K)
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