Shinku

Optical Properties of Dispersed Metal Particles and Size Dependences in Fine Particles

Tomuo YAMAGUCHI

1984 Volume 27 Issue 11 Pages 809-828
Published: November 20, 1984
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.27.809

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Planar Magnetron Sputtering System for Ferromagnetic Targets Using Co-sputtering Technique

Takakazu TAKAHASHI, Tsutomu MIYATA, Junsaku YOSHIDA

1984 Volume 27 Issue 11 Pages 829-837
Published: November 20, 1984
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.27.829

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A planar magnetron sputtering system for ferromagnetic targets is constructed for trial purposes and its DC discharge and sputtering characteristics and leakage magnetic field distributions are investigated for various currents of solenoid coil around a cylindrical pyrex chamber. Co-sputtering technique is proposed using a ferromagnetic or a non-magnetic cap-shaped target covered the SUS-304 cap for cooling a N-pole and a ferromagnetic washer-shaped target in this work. Four combinations of these targets are employed as follows : (a) Fe cap and Fe washer of 3 mm thickness, (b) Al cap and Fe washer of 3 mm thickness, (c) Al cap and Fe washer of 1 mm thickness and (d) Al cap and Ni washer of 1 mm thickness. The Ar gas pressures possible to discharge in the case of (a), (b) and (c) - (d) are 3-10 Pa, 0.2-3 Pa and 0.1-3 Pa respectively. And the deposition rates at 50W (DC power) in using (a), (b), (c) and (d) are 0.2-0.3 μm/h, 1.0-1.3 μm/h, 1.0-1.2 μm/h and 1.6-1.7 μm/h respectively.

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Development of Optical Devices by MBE

Haruo TANAKA, Masato MUSHIAGE, Jun ICHIHARA

1984 Volume 27 Issue 11 Pages 838-843
Published: November 20, 1984
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.27.838

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Growth conditions of Al_xGa_1-xAs layers for optical devices were investigated to find the optimum condition using a production-type MBE. It was found that the substrate temperature was the most important factor. Ridge wave guide stripe lasers fabricated from MBE DH wafers grown at about 680°C have good c w threshold currents (λ=773 nm, I_th=50 mA). Visible LEDs (λ=665 nm) were also fabricated from MBE DH wafers.

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On the Relative Sensitivity of Hot Cathode Ionization Gauge (1)

Schulz Gauge and Fogel Gauge

Hiroshi MIMA, Shigenobu KIYOI, Kunio YAGI, Futoshi KANEMATSU

1984 Volume 27 Issue 11 Pages 844-852
Published: November 20, 1984
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.27.844

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This paper proposes a new method for the derivation of relative sensitivity coefficient of a hot cathode ionization gauge. The coefficient is derived from the total ionization cross section of the sample gas with the aid of the (l-V) distribution data relevant to the ionizing electrons.
The (l-V) distribution has been newly adopted upon the concept that it signifies characteristics inherent to the hot cathode ionization gauge. It gives the path length l_i of an electron which contributes to ionization in terms of its energy eV_i. The path length l_i is computed from the (V_af-I⁺) characteristics which are experimentally measured upon the rationale of the law of scaling which predicts the invariance of electron path configurations under proportional alteration of all electrode voltages.
The Fogel and Schulz gauges were measured of their (V_af-I⁺) characteristics. The (l-V) distribution of each gauge was determined by the fitting method. Relative sensitivity coefficients of fourteen gases were calculated for these gauges. They showed good agreement with the calibrated values.

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