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Volume 30, Issue 11
Displaying 1-7 of 7 articles from this issue
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Kenzo FUJIWARA, Hitoshi OGATA1987 Volume 30 Issue 11 Pages 835-844
Published: November 20, 1987
Released on J-STAGE: October 20, 2009
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Motohiro IWAMI1987 Volume 30 Issue 11 Pages 845-852
Published: November 20, 1987
Released on J-STAGE: October 20, 2009
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Epitaxial Growth of Deposited Thin FilmsKimio INAOKA, Kiyoshi YASE, Masakazu OKADA1987 Volume 30 Issue 11 Pages 853-864
Published: November 20, 1987
Released on J-STAGE: October 20, 2009
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Michio WATAMORI, Fumiya SHOJI, Kenjiro OURA, Teruo HANAWA1987 Volume 30 Issue 11 Pages 865-872
Published: November 20, 1987
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSBy means of LEED and AES, we have studied the behavior of 1 ML-Ag atoms deposited on Si (111) surfaces with Ar+ pre-bombardments. On the surfaces with Ar+ pre-bombardments (1 KeV, 0.2-1.5×1015 ions/cm2), we observed the drastic decrease of Ag (MVV) Auger intensity with increasing annealing temperature. The intensity minimum was seen at about 350°C. Further increase of the annealing temperature led to the recovery of the Ag Auger intensity. From LEED observations the above intensity behavior was concluded to be mainly due to the internal diffusion of Ag atoms along the defects induced by Ar+ ion bombardments. The effects of the defect on the Si (111) surface cleaned by Ar+ ion bombardment and annealing, and on the atomic arrangements in the √3 × √3 Ag structure were discussed based on our results. Moreover, the 1 ML-Ag deposition and annealing was suggested to be an useful method to survey the low energy Ar+ion induced defects in Si (111) sub-surface (10Å).View full abstractDownload PDF (986K) -
Ion Radiation-Enhanced Segregation and DiffusionTakanori KOSHIKAWA1987 Volume 30 Issue 11 Pages 873-885
Published: November 20, 1987
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSSurface composition changes of Au-Cu alloys sputtered with 2 keV Ar ions were observed with low energy Auger spectra and ion radiation-enhanced diffusion (IRED) coefficiemts were obtained and Ion radiation-enhanced segregation (IRES) at the surface was estimated.
The simulation of sputtering including IRED and IRES was also perfomed using experimental results. This shows clearly that the IRES plays an important role in composition changes at the surface and subsurface of ion sputtered alloys.
Composition changes of Au-Cu thin film alloys prepared by the co-evaporation technique were also observed following sputtering with Ne, Ar and Kr. The coevaporated film composition was preserved during sputtering at low temperature (< -120°C).View full abstractDownload PDF (1555K) -
Kazuyuki KOGA, Yasuhiro UEDA, Toshitake NAKATA, Takao YAMAGUCHI, Tatsu ...1987 Volume 30 Issue 11 Pages 886-892
Published: November 20, 1987
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSSiC single crystals were successfully fabricated with an effective growth speed by a vacuum sublimation method. The dependence of the crystal growth rate on the pressure in the chamber and the temperature of the seed crystal was investigated. Maximum crystal sizes of 33 mm in diameter and 14 mm length can be achieved using crystal extension in the a-axis direction.
Aluminum-doped SiC powders were used as the source for the sublimation process to grow p-type SiC single crystals. The electrical and optical properties of p-type SiC were measured. The carrier concentration of p-type single crystals can be intentionally varied at the range of 1×1015 to 3×1018/cm3, using aluminum as a dopant.View full abstractDownload PDF (1139K) -
Kenjiro OBARA1987 Volume 30 Issue 11 Pages 901-911
Published: November 20, 1987
Released on J-STAGE: January 30, 2010
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