Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 41, Issue 2
Displaying 1-5 of 5 articles from this issue
  • Mitsuaki NISHIJIMA
    1998 Volume 41 Issue 2 Pages 37-44
    Published: February 20, 1998
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    Download PDF (1005K)
  • Yukio INOKUTI, Kazuhiro SUZUKI, Natsuki TAKAHASHI, Osamu OHKUBO
    1998 Volume 41 Issue 2 Pages 45-51
    Published: February 20, 1998
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    The effect of graphite cylinder inserted between the hollow Ta cathode and focusing coil in an hollow cathode discharge (HCD) gun on abnormal discharge prevention was investigated.
    When the graphite cylinder was inserted, no abnormal discharge was observed. In contrast, for the HCD gun without the graphite cylinder, an abnormal discharge on 7 times during plasma coating for 200 h was observed. These abnormal discharges were classified into 4 types; (1) a small variation in beam voltage (4 times), (2) a large variation in beam voltage (1 time), (3) HCD gun related type (1 time), and (4) HCD apparatus itself or coating condition related type (1 time).
    With the discharge of type (1), the TiN film peeled off in the area of the abnormal discharge, although it was possible to continue TiN coating. However, with discharges of the more serious types (2) - (4), TiN coating had to be stopped.
    Scanning electron microscopic observation of the TiN films in the area of the abnormal discharge showed a spiral-like morphology that was swollen by 100-400 μm longitudinally and by 60-100 μm transversely. The swollen area of the TiN film was extensively cracked, and a part had peeled off.
    Download PDF (2959K)
  • Yuji HIROSE, Kenji AOYAGI, Itsuo ISHIKAWA, Kazuya NAGASEKI, Yukinori S ...
    1998 Volume 41 Issue 2 Pages 52-56
    Published: February 20, 1998
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    Discharge characteristics at 1 MHz in CF4/O2 mixture at the total pressure of 66.5 Pa (0.5 Torr) have been investigated by electrical and optical methods. The discharge parameters such as the discharge-sustaining voltage and the discharge current in CF4/O2 discharge vary synergistically as a function of the gas mixing ratio. As mixing CF4 gas with O2 gas, the discharge mode varies from hollow plasma distribution in O2 discharge to uniform one in CF4/O2 discharge. In a range of CF4 ratio from 50 to 95%, the electron temperature increases over that in O2 discharge, and furthermore the intense photo-emission in front of the instantaneous anode due to the double layer is observed around the phases of ωt =π/2 and 3π/2. This emission profile is similar to that in strong electronegative SF6 discharge. These findings seem to come from the enhancement of electronegativity in CF4/O2 discharge at large CF4 mixting ratio.
    Download PDF (694K)
  • Makoto TANAKA, Takashi MARUYAMA, Toshio URANO, Toru KANAJI
    1998 Volume 41 Issue 2 Pages 57-63
    Published: February 20, 1998
    Released on J-STAGE: January 30, 2010
    JOURNAL FREE ACCESS
    The cascade static lens gauge (CSL gauge) is developed to measure the total pressure in extremely high vacuums (XHV) region. Because this gauge has a very high sensitivity (S≅102 Pa-1), experimental determination of its lowest measurable pressure was not easy since the limit is much lower than the practically obtainable pressure. Therefore, in this study, the sensitivity was lowered purposely by shortening the ion collector about half and the noise was increased by increasing the emission current about 20 times.
    In this condition, the X-ray photo-current was about 0.0025 pA, and the “X-ray limit” of the CSL gauge with a full-length ion collector in standard working condition was estimated to be about 6×1012 Pa.
    Reliability of the assumptions in this estimation are also discussed.
    Download PDF (1105K)
  • Joshin URAMOTO
    1998 Volume 41 Issue 2 Pages 64-67
    Published: February 20, 1998
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    Ordinary plasmas for the silicon wafer production of large area and high deposition rate, are produced in large volume-shape under high gas pressures and large gas flows (above 1.33×10 Pa and a few 1000 sccM) where their ionization rates and gas utilization efficiencies are very low. Then, the gas load of vacuum pump and the gas disposition become very serious. To improve these problems, the process plasma must be produced in wide sheet-shape under lower pressures and smaller gas flows where a high ionization rate and a high gas utilization efficiency are possible. Thus, a large disklike (50 cmφ) sheet plasma in thickness of 4 mm is proposed in a plasma density of 1012/cc of H2 gas and an electron temperature of 30 eV where the H2 gas pressure is lower (2.66 × 10-1 Pa) and the gas flow is smaller (200 sccM). An outside plasma (1011/cc, and 4 eV in 50 cmφ) 3 cm apart from this plasma sheet will be very usefull as the much improved process plasma.
    Download PDF (692K)
feedback
Top