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Electronic States in Hydrogenated Amorphous Si

Hideyo OKUSHI

1982 Volume 25 Issue 3 Pages 91-97
Published: March 20, 1982
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.25.91

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The Reaction between a Tungsten Filament and Nitric Oxide at High Temperatuers and Low Pressures

Takuya HAMAMURA, Teijiro TAMURA

1982 Volume 25 Issue 3 Pages 98-105
Published: March 20, 1982
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.25.98

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The reaction of tungsten with nitric oxide was studied by static method at tungsten temperatures from 1400 K to 1900 K and nitric oxide pressures from 4×10^-3 Pa to 1.3×10^-1 Pa. Under the reaction conditions, the tungsten oxide formed by the reaction immediately evaporates and filament surface is kept bright during the reaction. The reaction rate is proportional to the 0.7th power of the nitric oxide pressure and increases with an increase in the tungsten temperature, the apparent activation energy being 206 kJ/mol.
The rate equations for the consumption of nitric oxide and the loss of tungsten are expressed as follows :
D_NO=5.8×10^-2·P^0.7 exp (-206, 000/RT) mol/s·cm²
D_W=3.6·P^0.7 exp (-206, 000/RT) g/s·cm²
where P is in Pa and R is 8.31 J/mol·K.
The composition of the tungsten oxide produced in the reaction was determined as tungsten trioxide.
Possible reaction mechanism is discussed.

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Automatic In-line Evaluation of Thin Films with Ellipsometry

Yasuaki HAYASHI, Akio MATSUZAWA, Riichi FUKUTOME

1982 Volume 25 Issue 3 Pages 106-110
Published: March 20, 1982
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.25.106

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An ellipsometer is installed in an unloading chamber of in-line plasma CVD system to evaluate film thicknesses and refractive indices. The ellipsometer is a rotating-analyzer type, in which a λ/4 compensator is always positioned with the fast axis 45° setting a polarizer prism to a proper azimuth. The SiN_x films on silicon substrates prepared by plasma CVD are automatically and successivley checked in the system.

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High Temperature Sputtering of Cu/Ni Alloy : Roles of Ion-Enhanced Diffusion and Grain Boundary Erosion

Hazime SHIMIZU

1982 Volume 25 Issue 3 Pages 111-123
Published: March 20, 1982
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.25.111

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Structural and compositional modifications were investigated in the sputter-damaged surface layer of Cu-40 at%Ni alloy specimens at elevated temperatures by means of Auger electron spectroscopy (AES), X-ray microscopy (XMA), scanning electron microscopy (SEM) and electron channeling pattern (ECP) method. A long range depletion of copper was found in the layer beyond the trajectories of the primary ions. The apparent activation energy of the ion-enhanced volume diffusion was only 5.4±0.5 kcal/mol, suggesting that interstitial type diffusion was dominant. The active diffusion was also found along grain boundaries.

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Magneto-Optical Spectra of RF-Sputtered Amorphous Gd-Co Films

Katsuaki SATO, Yuji TOGAMI

1982 Volume 25 Issue 3 Pages 124-130
Published: March 20, 1982
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.25.124

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Spectral dependences of polar magneto-optical effect-Kerr rotation and reflectance magneto-circular dichroism (RMCD) -of rf-sputtered Gd-Co films have been studied. The Kerr rotation angle increases slightly toward longer wavelength with a hump around 11.2 μm. This result favors the use of semiconductor lasers for optical reading-out of recorded signals on the Gd-Co disk. In the RMCD spectra a sign reversal is observed at certain wavelength between 0.6 and 1.1 μm, which depends strongly on the bias voltage applied during film preparation. Influence on the RMCD spectrum of oxygen introduced during bias-sputtering has also been studied.

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Interband Optical Absorption of PbTe-Pb_1-xSn_xTe Superlattice Prepared by a Hot Wall Technique

Haruhisa KINOSHITA, Hiroshi KUWABARA, Hiroshi FUJIYASU

1982 Volume 25 Issue 3 Pages 131-139
Published: March 20, 1982
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.25.131

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Using the hot wall epitaxy technique, PbTe-Pb_1-xSn_xTe superlattices were grown on the base layers of epitaxial PbTe with about 100μm thickness and these superlattices were grown on BaF₂ substrates cleaved along (111) surface in air. The infrared transmittances of PbTe-Pb_1-xSn_xTe superlattices were measured at 150 K and 77 K. These transmittance properties have indicated the optical transitions of electrons from valence band to cond uction band of which structure were composed of the periodic quantum wells consisting of the superlattice potential. Comparing the quantum level observed by these experiments with the theoretical value calculated by Kronig-Penney model, the splitting of quantized motion of electrons or holes with light and heavy masses are observed. In these analysis, we have get the best coincidence between experimental and theoretical results by assuming that the central levels of forbidden gaps of PbTe are almost equal to that of Pb_0.8Sn_0.2Te.

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Erratum to : Preparation of Ti-Fe Alloy Films by Sputtering from Composite Targets with Fine Metal Wires

1982 Volume 25 Issue 3 Pages 151
Published: 1982
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.25.3_151

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