Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 31, Issue 9
Displaying 1-7 of 7 articles from this issue
  • Kouichirou HONDA, Akira OHSAWA
    1988 Volume 31 Issue 9 Pages 783-788
    Published: September 20, 1988
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Surface roughness of polished silicon wafers was observed by reflection electron microscopy (REM). Small steps were clearly resolved as fringe patteren, and rather rough steps of 1.2-1.6 nm in height and 200-500 nm in interval were observed as dark and bright bands. The Si-SiO2 interface was also observed by REM. REM has been confirmed as an effective means of observing both the silicon surface and the Si-SiO2 interface.
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  • Takahiro NAKAHIGASHI, Yoshitaka SETOGUCHI, Hiroya KIRIMURA, Kiyoshi OG ...
    1988 Volume 31 Issue 9 Pages 789-795
    Published: September 20, 1988
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    B-Si-N composite thin films were prepared by the plasma enhanced chemical vapour deposition method of inductive couple. The purpose of this paper is a micro structual control of boron nitride film, so we added Si in this film. The source gases used were B2H6, SiH4 and N2. The rf power, tempareture of substrate and gas pressure during depositions were 20 W, 300°C and 2 × 10-2 Torr, respectively. The physical, mechanical and optical properties of the films were investigated by several methods to clarify the effect of Si content. The following results were obtained;
    1) The prepared B-Si-N thin films were composed of two phases of BN and SiNx.
    2) The hardness (Hv) of the thin films gradually decreased from 6, 000 to 3, 000 as Si content increaced from O to 48 at%.
    3) The fracture toughness of the thin film improved dramatically when Si content exceeded 10 at%.
    4) The transmission and refractive index within a range between 700 and 2, 000 nm in wavelength, were 95-99% and 1.4-1.9 respectively depending on Si content.
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  • Kenya AKAISHI
    1988 Volume 31 Issue 9 Pages 796-800
    Published: September 20, 1988
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    A simple modeling on Pore structure in graphite bulk is made by assuming that many number of open-ended capillary tubes are distributed equivalently for three dimensional directions, in order to describe analytically surface roughness factor and gas permeability of a porous isotropic graphite sample. In the model for the pore structure of the graphite, avarage tube diameter, avarage tube length and avarage number density of distributed tubes in unit area are defined. The formulation describing the surface roughness factor and the gas permeability is made with derived geometrical parameters for the capillary tube model, and then these parameters are determined numerically by using experimental data produced by other workers on roughness factors and gas permeabilities for many graphite samples. The validity of the model is discussed for evaluation of outgassing properties of graphite materials.
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  • Nobuyuki HIRATSUKA, Shinichi KOBAYASHI, Hiroshi IMADA, Mitsuo SUGIMOTO
    1988 Volume 31 Issue 9 Pages 801-804
    Published: September 20, 1988
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Amorphous cobalt ferrite films were prepared by the dual source evaporation method adopting CoFe2 alloy and P2O5 as the starting materials. The films were made under various levels of pressure of evaporated P2O5 (PP2O5) and the maximum perpendicular magnetic anisotropy constant, 8 × 104 J/m3, was obtained at PP2O5= 1.3 Pa. The observation of SEM showed that the films were composed of the oriented texture with a fine columnar structure, which was presumed the cause of the large magnetic anisotropy. The binding energies of Co, Fe, P and 0 of the film were measured by ESCA and it was found that a small amount of nonreactive oxides of Co and Fe were still extant and also the existence of phosphorus oxides with P3+ and P5+. The measurement of broad Mossbauer spectrum could be assumed that the films have a complex magnetic structure.
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  • Hiroyuki YAMAKAWA
    1988 Volume 31 Issue 9 Pages 805-807
    Published: September 20, 1988
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    An all aluminum alloy equipment has been developed for a sputtering deposition of high quality thin films. The equipment is consist of an aluminum alloy sputter chamber with TiN coating, an aluminum alloy cryopump and an oil-free roughing pump system. It is interesting to investigate a pumping behavior and an ultra-high vacuum property of the equipment. The pressure in the sputter chamber could be lowered to 1.3 × 10-8 Pa (9.7 × 10-11 Torr) after a bakeout of 130°C × 46 hours.
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  • Tomio KUBO, Naoya MIYASHITA, Hajime ISHIMARU
    1988 Volume 31 Issue 9 Pages 808-810
    Published: September 20, 1988
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Download PDF (384K)
  • Koh MATSUMOTO
    1988 Volume 31 Issue 9 Pages 812-815
    Published: September 20, 1988
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
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