All issues
Volume 30, Issue 10
Displaying 1-6 of 6 articles from this issue
- |<
- <
- 1
- >
- >|
-
Koichi TANAKA1987 Volume 30 Issue 10 Pages 765-774
Published: October 20, 1987
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (1313K) -
Heisaburo FURUKAWA, Kenichi YANAGI, Mitsuo KATO, Esturo HIRAI, Takehik ...1987 Volume 30 Issue 10 Pages 775-785
Published: October 20, 1987
Released on J-STAGE: January 30, 2010
JOURNAL FREE ACCESSDownload PDF (1698K) -
Koji OKAMOTO, Eiji KAMIJO1987 Volume 30 Issue 10 Pages 786-792
Published: October 20, 1987
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSTitanium nitride films were deposited on High Speed Steel substrates at various bias voltage (0-400) as one of the process parameters by vacuumarc deposition process, and the effects of vias voltage on their cutting life, crystal structure, composition, surface morphology, adhesion and residual stress were investigated. The cutting life of TiN coated drill showed maximum value, when bias voltage was the range of -200-400 V.
The crystal orientation of deposited TiN film at low bias voltage (0-50 V) showed the strong (220) peak, whereas at high bias voltage (-100-400 V) showed the strong (111) peak. The composition ratio (N/Ti) of TiN film analyzed by X.P.S was in the rage of 0.950.98 and essentially independent of bias voltage. The micro hardness, adhesion and compressive residual stress of TiN film increased with increasing bias voltage and their maximum values were obtained at -200 V bias voltage.View full abstractDownload PDF (896K) -
Masao HIRASAKA, Masao HASHIBA, Toshiroh YAMASHINA1987 Volume 30 Issue 10 Pages 793-798
Published: October 20, 1987
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThe effect of surface roughness on depth profile in Auger Electron Spectroscopy (AES) has been experimentally studied. Films of a-Si : H were prepared by the glow discharge decomposition of SiH4 on substrates with various roughness and characterized by AES analysis. In AES depth profiles, the broadening width of a-Si : H/substrate interface increased with enhancing the roughness of the substrate. On the other hand, the decrease in Auger peak to peak intensity of a-Si : H layer is not observed. These results show that the broadening of iprofile is caused not by the sputter induced roughness, but by the surface roughness of the substrate. Consequently the broadening width (ΔW) of the interface is confirmed to be explained by expression as a function of X, such as ΔW=a·exp (b · X), where X is the roughness of substrate, and, a and b are coefficient.View full abstractDownload PDF (828K) -
Hideaki ISOGAI, Masahiro HIRATA, Masatoshi ONO, Kiyohide KOKUBUN1987 Volume 30 Issue 10 Pages 799-805
Published: October 20, 1987
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSJust after starting the operation of a spinning rotor gauge at pressure less than 2 × 10-6 Pa (nitrogen equivalent), its offset pressure changed by 3 × 10-5 Pa from its final value. A simulation using a personal computer, based on a heat exchange by radiation between a rotor and a rotor tube of the gauge, is carried out to reveal the change in the offset pressure. The result of the simulation showed a good agreement with the time chart of the offset pressure measured experimentally. Influence of parameters, such as linear expansion coefficient, density, specific heat, emissivity of the rotor etc., on the time variation is also studied by the simulation.View full abstractDownload PDF (704K) -
Kenjiro OBARA, Akira SAKAI, Hitoshi SUGIURA1987 Volume 30 Issue 10 Pages 806-812
Published: October 20, 1987
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (1315K)
- |<
- <
- 1
- >
- >|